Browsing by Author "Gutierrez-Heredia, Gerado"
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Item Effect of Annealing Atmosphere on IGZO Thin Film Transistors on a Deformable Softening Polymer Substrate(Institute of Physics Publishing) Gutierrez-Heredia, Gerado; Maeng, Jimin; Conde, J.; Rodriguez-Lopez, O.; Voit, Walter E.; 0000-0002-9198-1822 (Gutierrez-Heredia, G); 0000-0003-0135-0531 (Voit, WE); Gutierrez-Heredia, Gerado; Maeng, Jimin; Rodriguez-Lopez, O.; Voit, Walter E.The effect of annealing atmosphere on indium-gallium-zinc-oxide (IGZO) thin film transistors (TFTs) fabricated on a deformable softening polymer substrate is presented in this work. Different annealing conditions - ambient, oxygen, vacuum and forming gas - are employed in the fabrication of IGZO TFTs and the changes in electrical characteristics are examined. Fabricated devices exhibit shape memory properties due to thiol-ene/acrylate substrates allowing the softening of bioelectronics to demonstrate modulus changes in aqueous conditions at body temperature. Gold (Au) is used as the contact metal for the gate, drain and source for its good adherence and malleability required for this polymer. It is found that annealing treatments at 250 °C can improve the field effect mobility of the TFTs from 10⁻² up to 30 cm² V⁻¹ s⁻¹. These improvements are attributed to the reduction of oxygen concentration in the active film of the TFTs. The contact resistance is also reduced by the annealing treatments from approximately 1 MΩ to 20 kΩ, indicating improvement in physical contact at the IGZO-Au interface. In addition, the contributions of contact resistance and channel resistance to other electrical parameters are analyzed. This study will pave the way for the development and optimization of high-performance bioelectronic devices on smart polymers.Item Solution-Processed Oxide Thin Film Transistors on Shape Memory Polymer Enabled by Photochemical Self-Patterning(Cambridge University Press) Daunis, Trey B.; Barrera, Diego; Gutierrez-Heredia, Gerado; Rodriguez-Lopez, Ovidio; Wang, Jian; Voit, Walter E.; Hsu, Julia W. P.; 0000-0003-0135-0531 (Voit, WE); 0000-0002-7821-3001 (Hsu, JWP); Hsu, Julia W. P.; Daunis, Trey B.; Barrera, Diego; Gutierrez-Heredia, Gerado; Rodriguez-Lopez, Ovidio; Wang, Jian; Voit, Walter E.Solution-processed metal oxide electronics on flexible substrates can enable applications from military to health care. Due to limited thermal budgets and mismatched coefficients of thermal expansion between oxides and substrates, achieving good performance in solution-processed oxide films remains a challenge. Additionally, the use of traditional photolithographic processes is incompatible with low-cost, high-throughput roll-to-roll processing. Here, we demonstrate solution-deposited oxide thin film transistors (TFTs) on a shape memory polymer substrate, which offers unique control of final device shape and modulus. The key enabling step is the exposure of the precursor film to UV-ozone through a shadow mask to perform patterning and photochemical conversion simultaneously. These TFTs exhibit mobility up to 160 cm2/(V s), subthreshold swing as low as 110 mV/dec, and threshold voltage between -2 and 0 V, while maintaining compatibility with a flexible form factor at processing temperatures below 250 °C. ©2018 Materials Research Society.