Browsing by Author "Huang, D. H."
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Item Anomalously Large Resistance at the Charge Neutrality Point in a Zero-Gap InAs/GaSb Bilayer(IOP Publishing Ltd) Yu, W.; Clerico, V.; Hernandez Fuentevilla, C.; Shi, Xiaoyan; Jiang, Y.; Saha, D.; Lou, W. K.; Chang, K.; Huang, D. H.; Gumbs, G.; Smirnov, D.; Stanton, C. J.; Jiang, Z.; Bellani, V.; Meziani, Y.; Diez, E.; Pan, W.; Hawkins, S. D.; Klem, J. F.; Shi, XiaoyanWe report here our recent electron transport results in spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (similar to 500 k Omega) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature dependence above T = 7 Kand perfect stability against quantizing magnetic fields. We discuss several mechanisms for that unexpectedly large resistance in this zero-gap semi-metal system including the formation of an excitonic insulator state.