Browsing by Author "Myers, Kenneth J."
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Item A New Analytical Tool for the Study of Radiation Effects in 3-D Integrated Circuits: Near-Zero Field Magnetoresistance Spectroscopy(Institute of Electrical Electronics Engineers Inc, 2018-12-06) Ashton, James P.; Moxim, Stephen J.; Lenahan, Patrick M.; McKay, Colin G.; Waskiewicz, Ryan J.; Myers, Kenneth J.; Flatte, Michael E.; Harmon, Nicholas J.; Young, Chadwin D.; 0000-0003-0690-7423 (Young, CD); Young, Chadwin D.We demonstrate that a new technique, near-zero field magnetoresistance (NZFMR) spectroscopy, can explore radiation damage in a wide variety of devices in a proof-of-concept study. The technique has great potential for the study of atomic-scale mechanisms of radiation damage in 3-D integrated circuits. In our study, we explore radiation damage in structures relevant to 3-D integrated circuits, but not on 3-D test structures themselves. Five structures of great technological importance to 3-D integrated circuits are investigated. We utilize both NZFMR and electrically detected magnetic resonance to investigate radiation effects in these structures. The structures involved in this paper are planar silicon metal-oxide-semiconductor field-effect transistors, silicon-germanium alloy-based transistors, fin-based transistors, silicon dioxide-based flowable oxides, and low-k dielectrics. Our study indicates that NZFMR has great potential in radiation damage studies, with exceptional promise in systems in which more conventional resonance is not possible.