Browsing by Author "Naquin, Clint"
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Item Negative Differential Transconductance in Silicon Quantum Well Metal-Oxide-Semiconductor Field Effect/Bipolar Hybrid Transistors(American Institute Of Physics Inc., 2014-11-25) Naquin, Clint; Lee, Mark; Edwards, H.; Mathur, G.; Chatterjee, T.; Maggio, K.Introducing explicit quantum transport into Si transistors in a manner amenable to industrial fabrication has proven challenging. Hybrid field-effect/bipolar Si transistors fabricated on an industrial 45 nm process line are shown to demonstrate explicit quantum transport signatures. These transistors incorporate a lateral ion implantation-defined quantum well (QW) whose potential depth is controlled by a gate voltage (VG). Quantum transport in the form of negative differential transconductance (NDTC) is observed to temperatures > 200 K. The NDTC is tied to a non-monotonic dependence of bipolar current gain on VG that reduces drain-source current through the QW. These devices establish the feasibility of exploiting quantum transport to transform the performance horizons of Si devices fabricated in an industrially scalable manner.