Browsing by Author "Peng, Y."
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Item The Band Structure Change of Hf₀.₅Zr₀.₅O₂/Ge System upon Post Deposition Annealing(Elsevier B.V., 2019-05-25) Feng, Z.; Peng, Y.; Liu, H.; Sun, Y.; Wang, Y.; Meng, M.; Liu, H.; Wang, J.; Wu, R.; Wang, Xinglu; Cho, Kyeongjae; Han, G.; Dong, H.; 0000-0003-2698-7774 (Cho, K); 369148996084659752200 (Cho, K); Wang, Xinglu; Cho, KyeongjaeHafnium zirconium oxide films have been utilized in negative capacitance (NC) field-effect transistors (FETs). The band alignment of semiconductor and HfZrOₓ film is critical to obtain high device performance. The band alignment of Hf₀.₅Zr₀.₅O₂/SiOₓ/Ge system before and after post deposition annealing at 500 °C is studied via angle resolved X-ray photoelectron spectroscopy, synchrotron radiation photoemission spectroscopy and UV–Visible spectroscopy. The band gap of Hf₀.₅Zr₀.₅O₂ is seen narrowed 0.27 ± 0.05 eV, and the valence band offset between Hf₀.₅Zr₀.₅O₂ and Ge decreases 0.25 eV ± 0.05 eV after PDA at 500 °C. Therefore, the conduction band offset is nearly unchanged. This work gives insights into the interface physics about Hf₀.₅Zr₀.₅O₂/SiOₓ and is valuable for Ge-based NC pFETs. ©2019 Elsevier B.V.