Browsing by Author "Posadas, Agham B."
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Item Cubic Crystalline Erbium Oxide Growth on GaN(0001) by Atomic Layer Deposition(Amer Inst Physics, 2018-10-22) Chen, Pei-Yu; Posadas, Agham B.; Kwon, Sunah; Wang, Qingxiao; Kim, Moon J.; Demkov, Alexander A.; Ekerdt, John G.; Kwon, Sunah; Wang, Qingxiao; Kim, Moon J.Growth of crystalline Er₂O₃, a rare earth sesquioxide, on GaN(0001) is described. Ex situ HCl and NH₄OH solutions and an in situ N₂ plasma are used to remove impurities on the GaN surface and result in a Ga/N stoichiometry of 1.02. Using atomic layer deposition with erbium tris(isopropylcyclopentadienyl) [Er((^{i}PrCp)₃] and water, crystalline cubic Er₂O₃ (C-Er₂O₃) is grown on GaN at 250 ⁰C. The orientation relationships between the C-Er₂O₃ film and the GaN substrate are C-Er₂O₃(222)