Browsing by Author "Summerfelt, S. R."
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Item Ferroelectric TiN/Hf₀.₅Zr₀.₅O₂/Tin Capacitors with Low-Voltage Operation and High Reliability for Next-Generation FRAM Applications(Institute of Electrical and Electronics Engineers Inc.) Kim, Si Joon; Mohan, Jaidah; Young, Chadwin D.; Colombo, Luigi; Kim, Jiyoung; Summerfelt, S. R.; San, T.; 0000-0003-0690-7423 (Young, CD); 0000-0003-2781-5149 (Kim, J); 70133685 (Kim, J); Kim, Si Joon; Mohan, Jaidah; Young, Chadwin D.; Colombo, Luigi; Kim, JiyoungIn this study, we investigated the ferroelectric properties of Hf₀.₅Zr₀.₅O₂ (HZO) thin films with different thicknesses (5-20 nm) deposited by atomic layer deposition for the development of future ferroelectric random access memory cells. HZO-based capacitors with a thickness of 5 nm exhibited a switching polarization of ~13 μC/cm² and a ferroelectric saturation voltage of 1.0 V as extracted from the pulse write/read measurements. Furthermore, we performed fatigue measurements and we found no degradation up to 10¹⁰ switching cycles at 1.2 V.