Browsing by Author "Wang, Jian"
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Item Organic-Inorganic Hybrid Semiconductor Thin Films Deposited Using Molecular-Atomic Layer Deposition (MALD)(Royal Society of Chemistry) Huang, Jie; Zhang, Hengji; Lucero, Antonio; Cheng, Lanxia; KC, Santosh; Wang, Jian; Hsu, Julia W. P.; Cho, Kyeongjae; Kim, Jiyoung; 0000 0003 8600 0978 (Hsu, JWP); 0000-0003-2698-7774 (Cho, K); 0000-0003-2781-5149 (Kim, J); Huang, Jie; Zhang, Hengji; Lucero, Antonio; Cheng, Lanxia; KC, Santosh; Wang, Jian; Hsu, Julia W. P.; Cho, Kyeongjae; Kim, JiyoungMolecular-atomic layer deposition (MALD) is employed to fabricate hydroquinone (HQ)/diethyl zinc (DEZ) organic-inorganic hybrid semiconductor thin films with accurate thickness control, sharp interfaces, and low deposition temperature. Self-limiting growth is observed for both HQ and DEZ precursors. The growth rate remains constant at approximately 2.8 Å per cycle at 150°C. The hybrid materials exhibit n-type semiconducting behavior with a field effect mobility of approximately 5.7 cm² V⁻¹ s⁻¹ and an on/off ratio of over 103 following post annealing at 200°C in nitrogen. The resulting films are characterized using ellipsometry, Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), UV-Vis spectroscopy, transistor behavior, and Hall-effect measurements. Density functional theory (DFT) and many-body perturbation theory within the GW approximation are also performed to assist the explanation and understanding of the experimental results. This research offers n-channel materials as valuable candidates for efficient organic CMOS devices. © 2016.Item Solution-Processed Oxide Thin Film Transistors on Shape Memory Polymer Enabled by Photochemical Self-Patterning(Cambridge University Press) Daunis, Trey B.; Barrera, Diego; Gutierrez-Heredia, Gerado; Rodriguez-Lopez, Ovidio; Wang, Jian; Voit, Walter E.; Hsu, Julia W. P.; 0000-0003-0135-0531 (Voit, WE); 0000-0002-7821-3001 (Hsu, JWP); Hsu, Julia W. P.; Daunis, Trey B.; Barrera, Diego; Gutierrez-Heredia, Gerado; Rodriguez-Lopez, Ovidio; Wang, Jian; Voit, Walter E.Solution-processed metal oxide electronics on flexible substrates can enable applications from military to health care. Due to limited thermal budgets and mismatched coefficients of thermal expansion between oxides and substrates, achieving good performance in solution-processed oxide films remains a challenge. Additionally, the use of traditional photolithographic processes is incompatible with low-cost, high-throughput roll-to-roll processing. Here, we demonstrate solution-deposited oxide thin film transistors (TFTs) on a shape memory polymer substrate, which offers unique control of final device shape and modulus. The key enabling step is the exposure of the precursor film to UV-ozone through a shadow mask to perform patterning and photochemical conversion simultaneously. These TFTs exhibit mobility up to 160 cm2/(V s), subthreshold swing as low as 110 mV/dec, and threshold voltage between -2 and 0 V, while maintaining compatibility with a flexible form factor at processing temperatures below 250 °C. ©2018 Materials Research Society.Item Sub-10 NM Copper Chromium Oxide Nanocrystals as a Solution Processed P-Type Hole Transport Layer for Organic Photovoltaics(Royal Society of Chemistry) Wang, Jian; Lee, Yun -Ju; Hsu, Julia W. P.; Wang, Jian; Lee, Yun -Ju; Hsu, Julia W. P.We report the synthesis of CuCrO₂ nanocrystals, a p-type transparent conducting oxide, and their application as an efficient hole transport layer (HTL) for organic photovoltaic (OPV) devices. A nanometer-sized mixture of Cu and Cr oxide/hydroxide is synthesized using microwave-assisted heating. With a 550 °C post-annealing treatment in N₂, <10 nm CuCrO₂ nanocrystals are successfully synthesized. XRD, XPS, EDAX, PESA, UV-vis spectrometry, and Kelvin probe technique are applied to confirm the delafossite phase, optical transmission, and p-type characteristics. Methanol is found to be a good solvent to disperse these nanocrystals for forming a smooth and transparent film. In comparison with the previously reported CuGaO₂ HTL, the reduced film roughness enables the CuCrO₂ HTL to produce highly efficient thin active layer OPV devices. UV-ozone treatment on the CuCrO₂ HTL is found to increase the fill factor. Drift-diffusion modeling, energy level measurements, and XPS results reveal that the device improvement is not due to the reduced injection barrier, but due to an improved CuCrO₂ conductivity arising from the formation of Cu²⁺ species.