Browsing by Author "Wang, Luhua"
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Item Engineering The Palladium-WSe₂ Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts(Amer Chemical Soc, 2018-12-07) Smyth, Christopher M.; Walsh, Lee A.; Bolshakov, Pavel; Catalano, Massimo; Addou, Rafik; Wang, Luhua; Kim, Jiyoung; Kim, Moon J.; Young, Chadwin D.; Hinkle, Christopher L.; Wallace, Robert M.; 0000-0001-5566-4806 (Wallace, RM); 0000-0003-0690-7423 (Young, CD); 0000-0003-2781-5149 (Kim, J); 0000-0002-6688-8626 (Walsh, LA); 0000-0002-5485-6600 (Hinkle, CD); 0000-0002-5454-0315 (Addou, R); 70133685 (Kim, J); Smyth, Christopher M.; Walsh, Lee A.; Bolshakov, Pavel; Catalano, Massimo; Addou, Rafik; Wang, Luhua; Kim, Jiyoung; Kim, Moon J.; Young, Chadwin D.; Hinkle, Christopher L.; Wallace, Robert M.Palladium has been widely employed as a hole contact to WSe₂ and has enabled, at times, the highest WSe₂ transistor performance. However, there are orders of magnitude variation across the literature in Pd-WSe₂ contact resistance and I-ON/I-OFF ratios with no true understanding of how to consistently achieve high-performance contacts. In this work, WSe₂ transistors with impressive I-ON/I-OFF ratios of 10(6) and Pd-WSe₂ Schottky diodes with near-zero variability are demonstrated utilizing Ohmic-like Pd contacts through deliberate control of the interface chemistry. The increased concentration of a PdSeₓ intermetallic is correlated with an Ohmic band alignment and concomitant defect passivation, which further reduces the contact resistance, variability, and barrier height inhomogeneity. The lowest contact resistance occurs when a 60 min post-metallization anneal at 400 degrees C in forming gas (FG) is performed. X-ray photoelectron spectroscopy indicates this FG anneal produces 3x the concentration of PdSeₓ and an Ohmic band alignment, in contrast to that detected after annealing in ultrahigh vacuum, during which a 0.2 eV hole Schottky barrier forms. Raman spectroscopy and scanning transmission electron microscopy highlight the necessity of the fabrication step to achieve high-performance contacts as no PdSeₓ forms, and WSe₂ is unperturbed by room temperature Pd deposition. However, at least one WSe₂ layer is consumed by the necessary interface reactions that form PdSeₓ requiring strategic exploitation of a sacrificial WSe₂ layer during device fabrication. The interface chemistry and structural properties are correlated with Pd-WSe₂ diode and transistor performance, and the recommended processing steps are provided to enable reliable high-performance contact formation.Item Enhanced Thermal Conductivity in Cu/Diamond Composites by Tailoring the Thickness of Interfacial TiC Layer(Elsevier Ltd) Wang, Luhua; Li, J.; Catalano, Massimo; Bai, G.; Li, N.; Dai, J.; Wang, X.; Zhang, H.; Wang, Jinguo; Kim, Moon J.; Wang, Luhua; Catalano, Massimo; Wang, Jinguo; Kim, Moon J.Diamond particles reinforced Cu matrix (Cu/diamond) composites were fabricated by gas pressure infiltration using Ti-coated diamond particles with Ti coating from 65 nm to 850 nm. The scanning transmission electron microscopy (STEM) characterizes that the Ti coating transforms from elemental Ti to TiC after infiltration, and the crystallographic orientation relationship between diamond and TiC is [1 1 0]_{diamond}//[1 1 0]_{TiC} and (1 1 1)_{diamond}//(1 1 1)_{TiC}. The thermal conductivity of the Cu/Ti-diamond composites firstly increases and then decreases with increasing Ti coating thickness, giving a maximal value of 811 W m⁻¹ K⁻¹ at 220 nm Ti-coating layer. The results clearly manifest the effect of interfacial layer thickness on the thermal conductivity of Cu/diamond composites.Item Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature(Wiley-VCH Verlag, 2019-06-11) Lo, C. -L; Catalano, Massimo; Khosravi, Ava; Ge, W.; Ji, Y.; Zemlyanov, D. Y.; Wang, Luhua; Addou, Rafik; Liu, Y.; Wallace, Robert M.; Kim, Moon J.; Chen, Z.; 0000-0001-5566-4806 (Wallace, RM); Catalano, Massimo; Khosravi, Ava; Wang, Luhua; Addou, Rafik; Wallace, Robert M.; Kim, Moon J.The interconnect half-pitch size will reach ≈20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be >4 nm to ensure acceptable liner and diffusion barrier properties. Since TaN/Ta occupy a significant portion of the interconnect cross-section and they are much more resistive than Cu, the effective conductance of an ultrascaled interconnect will be compromised by the thick bilayer. Therefore, 2D layered materials have been explored as diffusion barrier alternatives. However, many of the proposed 2D barriers are prepared at too high temperatures to be compatible with the back-end-of-line (BEOL) technology. In addition, as important as the diffusion barrier properties, the liner properties of 2D materials must be evaluated, which has not yet been pursued. Here, a 2D layered tantalum sulfide (TaSₓ) with ≈1.5 nm thickness is developed to replace the conventional TaN/Ta bilayer. The TaSx ultrathin film is industry-friendly, BEOL-compatible, and can be directly prepared on dielectrics. The results show superior barrier/liner properties of TaSₓ compared to the TaN/Ta bilayer. This single-stack material, serving as both a liner and a barrier, will enable continued scaling of interconnects beyond 5 nm node. ©2019 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimItem Kinetic Stability of Bulk LiNiO₂ and Surface Degradation by Oxygen Evolution in LiNiO₂-Based Cathode Materials(Wiley-VCH Verlag Gmbh, 2018-11-02) Kong, Fantai; Liang, Chaoping; Wang, Luhua; Zheng, Yongping; Perananthan, Sahila; Longo, Roberto C.; Ferraris, John P.; Kim, Moon J.; Cho, Kyeongjae; Kong, Fantai; Liang, Chaoping; Wang, Luhua; Zheng, Yongping; Perananthan, Sahila; Longo, Roberto C.; Ferraris, John P.; Kim, Moon J.; Cho, KyeongjaeCapacity degradation by phase changes and oxygen evolution has been the largest obstacle for the ultimate commercialization of high-capacity LiNiO₂-based cathode materials. The ultimate thermodynamic and kinetic reasons of these limitations are not yet systematically studied, and the fundamental mechanisms are still poorly understood. In this work, both phenomena are studied by density functional theory simulations and validation experiments. It is found that during delithiation of LiNiO₂, decreased oxygen reduction induces a strong thermodynamic driving force for oxygen evolution in bulk. However, oxygen evolution is kinetically prohibited in the bulk phase due to a large oxygen migration kinetic barrier (2.4 eV). In contrast, surface regions provide a larger space for oxygen migration leading to facile oxygen evolution. These theoretical results are validated by experimental studies, and the kinetic stability of bulk LiNiO₂ is clearly confirmed. Based on these findings, a rational design strategy for protective surface coating is proposed.Item Tailoring Interface Structure and Enhancing Thermal Conductivity of Cu/Diamond Composites by Alloying Boron to the Cu Matrix(Elsevier Inc.) Bai, G.; Wang, Luhua; Zhang, Y.; Wang, X.; Wang, Jinguo; Kim, Moon J.; Zhang, H.; Wang, Luhua; Wang, Jinguo; Kim, Moon J.Diamond particles reinforced Cu matrix (Cu/diamond) composites were prepared by alloying 0.1–1.0 wt% B to the Cu matrix in order to tailor the interface structure. The interface structure evolves from discrete triangular carbides into continuous jig-saw carbides depending on the availability of boron source in the Cu-B matrix. We report the highest thermal conductivity of 868 W/mK so far in boron-modified Cu/diamond composites, which originates from the discontinuous carbide interface in the Cu-B/diamond composites. The parallel connection of interfacial thermal resistances of the discontinuous carbide interface reduces the total interfacial thermal resistance and therefore promotes phonon transfer across the Cu/diamond interface. We clarify the formation mechanism of discontinuous carbide interface in the Cu-B/diamond composites and demonstrate the decisive role of discrete triangular carbides in enhancing thermal conductivity of Cu/diamond composites. The results help to establish the method of metal matrix alloying to prepare Cu/diamond composites with high thermal conductivity for thermal management applications. © 2019 Elsevier Inc.