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    • Morphology and Chemical Termination of HF-Etched Si₃N₄ Surfaces 

      Liu, Li-Hong; Debenedetti, William J. I.; Peixoto, Tatiana; Gokalp, Sumeyra; Shafiq, Natis; Veyan, Jean-François; Michalak, D. J.; Hourani, R.; Chabal, Yves J.
      Several reports on the chemical termination of silicon nitride films after HF etching, an important process in the microelectronics industry, are inconsistent claiming N-Hx, Si-H, or fluorine termination. An investigation ...