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    • Chemical and Electrical Characterization of the HfO2/InAlAs Interface 

      Brennan, Barry; Galatage, Rohit V.; Thomas, K.; Pelucchi, E.; Hurley, P. K.; Kim, Jiyoung; Hinkle, Christopher L.; Vogel, E. M.; Wallace, Robert M.
      InAlAs has the potential to be used as a barrier layer in buried channel quantum well field effect transistor devices due to favorable lattice-matching and carrier confinement properties with InGaAs. Field effect device ...