Now showing items 1-4 of 4

    • Chemical and Electrical Characterization of the HfO2/InAlAs Interface 

      Brennan, Barry; Galatage, Rohit V.; Thomas, K.; Pelucchi, E.; Hurley, P. K.; Kim, Jiyoung; Hinkle, Christopher L.; Vogel, E. M.; Wallace, Robert M.
      InAlAs has the potential to be used as a barrier layer in buried channel quantum well field effect transistor devices due to favorable lattice-matching and carrier confinement properties with InGaAs. Field effect device ...
    • In Situ Study of E-Beam Al And Hf Metal Deposition on Native Oxide InP (100) 

      Dong, Hong; Santosh, KC; Azcatl, Angelica; Cabrera, Wilfredo; Qin, Xiaoye; Brennan, Barry; Zhernokletov, Dmitry; Cho, Kyeongjie; Wallace, Robert M.
      The interfacial chemistry of thin Al (∼3 nm) and Hf (∼2 nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ ...
    • In Situ Study of the Role of Substrate Temperature during Atomic Layer Deposition of HfO2 on InP 

      Dong, Hong; Santosh, KC; Qin, Xiaoye; Brennan, Barry; McDonnell, Steven; Zhernokletov, Dmitry; Hinkle, Christopher L.; Kim, Jiyoung; Cho, Kyeongjie; Wallace, Robert M. (2013-10-16)
      The dependence of the "self cleaning" effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO₂ on various chemically treated and native oxide InP (100) substrates is investigated ...
    • Investigation of High Oxygen Reduction Reaction Catalytic Performance on Mn-Based Mullite SmMn₂O₅ 

      Liu, Jieyu; Yu, Meng; Wang, Xuewei; Wu, Jie; Wang, Changhong; Zheng, Lijun; Yang, Dachi; Liu, Hui; Yao, Yan; Lu, Feng; Wang, Weichao (Royal Soc Chemistry, 2017-10)
      An alternative material SmMn₂O₅ mullite with regard to Pt/C is proposed to catalyze the oxygen reduction reaction (ORR) by combining density functional theory (DFT) calculations and experimental validations. Theoretical ...