Fischetti, Massimo V.
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An expert in how electrons move in solids, Dr. Fischetti is renowned in the field for the development of DAMOCLES, a computer program that was the first to accurately simulate how electrons move in small semiconductors using what is known as the Monte Carlo transport model. The program is used to design transistors for chips in computers, smartphones and advanced video games.
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Works in Treasures @ UT Dallas are made available exclusively for educational purposes such as research or instruction. Literary rights, including copyright for published works held by the creator(s) or their heirs, or other third parties may apply. All rights are reserved unless otherwise indicated by the copyright owner(s).
Recent Submissions
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"Hot Electrons in Si Lose Energy Mostly to Optical Phonons:" Truth or Myth?
(American Institute of Physics Inc., 2019-06-05)Theoretical studies of heat generation and diffusion in Si devices generally assume that hot electrons in Si lose their energy mainly to optical phonons. Here, we briefly review the history of this assumption, and using ... -
Understanding the Average Electron-Hole Pair-Creation Energy in Silicon and Germanium Based on Full-Band Monte Carlo Simulations
(Institute of Electrical Electronics Engineers Inc, 2019-01)The thermalization process of sub-10-eV charge carriers is examined with treating carrier transport with full-band Monte Carlo simulations. The average energy loss (3.69 eV in Si and 2.62 eV in Ge) required to create a ... -
Theoretical Studies of Electronic Transport in Monolayer and Bilayer Phosphorene: A Critical Overview
Recent ab initio theoretical calculations of the electrical performance of several two-dimensional materials predict a low-field carrier mobility that spans several orders of magnitude (from 26000 to 35 cm²V⁻¹s⁻¹, for ... -
Modeling of Electron Transport in Nanoribbon Devices Using Bloch Waves
One-dimensional (1D) materials present the ultimate limit of extremely scaled devices by virtue of their spatial dimensions and the excellent electrostatic gate control in the transistors based on these materials. Among ... -
Superconductivity Induced by Flexural Modes in Non-σ_h-Symmetric Dirac-Like Two-Dimensional Materials: A Theoretical Study for Silicene and Germanene
In two-dimensional crystals that lack symmetry under reflections on the horizontal plane of the lattice (non-σ_h-symmetric), electrons can couple to flexural modes (ZA phonons) at first order. We show that in materials of ... -
Theoretical Simulation of Negative Differential Transconductance in Lateral Quantum Well nMOS Devices
(American Institute of Physics Inc, 2017-01-23)We present a theoretical study of the negative differential transconductance (NDT) recently observed in the lateral-quantum-well Si n-channel field-effect transistors J. Appl. Phys. 118, 124505 (2015)]. In these devices, ... -
Mermin-Wagner Theorem, Flexural Modes, and Degraded Carrier Mobility in Two-Dimensional Crystals with Broken Horizontal Mirror Symmetry
(Amer Physical Soc, 2016-04-11)We show that the electron mobility in ideal, free-standing two-dimensional "buckled" crystals with broken horizontal mirror (σ_h) symmetry and Dirac-like dispersion (such as silicene and germanene) is dramatically affected ... -
Energies of the X- and L-Valleys in In(0.53)Ga(0.47) as from Electronic Structure Calculations
Several theoretical electronic structure methods are applied to study the relative energies of the minima of the X- and L-conduction-band satellite valleys of In(x)Ga(1-x)As with x = 0.53. This III-V semiconductor is a ... -
Ab Initio Study of the Electronic Properties and Thermodynamic Stability of Supported and Functionalized Two-Dimensional Sn Films
Using density-functional theory (DFT), we study the growth of pristine and functionalized tin monolayers (Sn-MLs) on three different substrates, CdTe, InSb, and Si(111), and the impact these substrates have on the topological ... -
Calculation of Room Temperature Conductivity and Mobility in Tin-Based Topological Insulator Nanoribbons
Monolayers of tin (stannanane) functionalized with halogens have been shown to be topological insulators. Using density functional theory (DFT), we study the electronic properties and room-temperature transport of nanoribbons ... -
Deformation Potentials for Band-To-Band Tunneling in Silicon and Germanium from First Principles
The deformation potentials for phonon-assisted band-to-band tunneling (BTBT) in silicon and germanium are calculated using a plane-wave density functional theory code. Using hybrid functionals, we obtain: D(TA) = 4.1 x 10⁸ ... -
Intrinsic Broadening of the Mobility Spectrum of Bulk N-Type GaAs
Modern devices consisting of multiple semiconductor layers often result in the population of numerous distinct carrier species. Conventional Hall measurements at a single-magnetic-field strength provide only a weighted ... -
Depression of the Normal-Superfluid Transition Temperature in Gated Bilayer Graphene
It is shown that the normal-superfluid transition in bilayer graphene predicted to occur at a high temperature is strongly affected not only by the dielectric constants of the substrate, interlayer, and gate insulators but ... -
Signatures of Dynamic Screening in Interfacial Thermal Transport of Graphene
The interaction between graphene and various substrates plays an important and limiting role on the behavior of graphene films and devices. Here we uncover that dynamic screening of so-called remote substrate phonons (RPs) ... -
Figure of Merit for and Identification of Sub-60 mV/Decade Devices
A figure of merit I₆₀ is proposed for sub-60 mV/decade devices as the highest current where the input characteristics exhibit a transition from sub- to super-60 mV/decade behavior. For sub-60 mV/decade devices to be ... -
Theory of Interfacial Plasmon-Phonon Scattering in Supported Graphene
One of the factors limiting electron mobility in supported graphene is remote phonon scattering. We formulate the theory of the coupling between graphene plasmon and substrate surface polar phonon (SPP) modes and find that ... -
Fundamental Limitations of Hot-Carrier Solar Cells
Sunlight-generated hot-carrier transport in strongly absorbing direct band-gap GaAs-among the most optimal of semiconductors for high-efficiency solar cells-is simulated with an accurate full-band structure self-consistent ... -
Charged Impurity Scattering in Top-Gated Graphene Nanostructures
We study charged impurity scattering and static screening in a top-gated substrate-supported graphene nanostructure. Our model describes how boundary conditions can be incorporated into scattering, sheds light on the ... -
Structural, Electronic, and Transport Properties of Silicane Nanoribbons
Silicane ribbons do not suffer from aromatic dependence of the band gap making them a more promising candidate for near-term nanoelectronic application compared to armchair graphene nanoribbons. The structural, electronic, ...
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