Now showing items 1-3 of 3

    • Covalent Nitrogen Doping in Molecular Beam Epitaxy-Grown and Bulk WSe₂ 

      Khosravi, Ava; Addou, Rafik; Smyth, Christopher M.; Yue, Ruoyu; Cormier, Christopher R.; Kim, Jiyoung; Hinkle, Christopher L.; Wallace, Robert M. (American Institute of Physics Inc, 2018-10-22)
      Covalent p-type doping of WSe₂ thin films grown by molecular beam epitaxy and WSe₂ exfoliated from bulk crystals is achieved via remote nitrogen plasma exposure. X-ray photoelectron and Raman spectroscopies indicate ...
    • Engineering The Palladium-WSe₂ Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts 

      Smyth, Christopher M.; Walsh, Lee A.; Bolshakov, Pavel; Catalano, Massimo; Addou, Rafik; Wang, Luhua; Kim, Jiyoung; Kim, Moon J.; Young, Chadwin D.; Hinkle, Christopher L.; Wallace, Robert M. (Amer Chemical Soc, 2018-12-07)
      Palladium has been widely employed as a hole contact to WSe₂ and has enabled, at times, the highest WSe₂ transistor performance. However, there are orders of magnitude variation across the literature in Pd-WSe₂ contact ...
    • High-κ Dielectric on ReS₂: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al₂O₃ 

      Khosravi, Ava; Addou, Rafik; Catalano, Massimo; Kim, Jiyoung; Wallace, Robert M. (MDPI AG, 2019-03-30)
      We report an excellent growth behavior of a high-κ dielectric on ReS₂ , a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al₂O₃ thin film on the UV-Ozone pretreated surface ...