Now showing items 1-3 of 3

    • Al₂O₃ on WSe₂ by Ozone Based Atomic Layer Deposition: Nucleation and Interface Study 

      Azcatl, Angelica; Wang, Qingxiao; Kim, Moon J.; Wallace, Robert M.
      In this work, the atomic layer deposition process using ozone and trimethylaluminum (TMA) for the deposition of Al₂O₃ films on WSe₂ was investigated. It was found that the ozone-based atomic layer deposition enhanced the ...
    • In Situ Study of E-Beam Al And Hf Metal Deposition on Native Oxide InP (100) 

      Dong, Hong; Santosh, KC; Azcatl, Angelica; Cabrera, Wilfredo; Qin, Xiaoye; Brennan, Barry; Zhernokletov, Dmitry; Cho, Kyeongjie; Wallace, Robert M.
      The interfacial chemistry of thin Al (∼3 nm) and Hf (∼2 nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ ...
    • MoS₂ Functionalization for Ultra-Thin Atomic Layer Deposited Dielectrics 

      Azcatl, Angelica; McDonnell, Stephen; KC, Santosh; Peng, Xin; Dong, Hong; Qin, Xiaoye; Addou, Rafik; Mordi, Greg I.; Lu, Ning; Kim, Jiyoung; Kim, Moon J.; Cho, Kyeongjae; Wallace, Robert M.
      The effect of room temperature ultraviolet-ozone (UV-O₃) exposure of MoS₂ on the uniformity of subsequent atomic layer deposition of Al₂O₃ is investigated. It is found that a UV-O₃ pre-treatment removes adsorbed carbon ...