Browsing Wallace, Robert M. by Issue Date
Now showing items 1-20 of 29
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Investigation of interfacial oxidation control using sacrificial metallic Al and La passivation layers on InGaAs
(2012-05-25)The ability of metallic Al and La interlayers to control the oxidation of InGaAs substrates is examined by monochromatic x-ray photoelectron spectroscopy (XPS) and compared to the interfacial chemistry of atomic layer ... -
In situ atomic layer deposition half cycle study of Al2O 3 growth on AlGaN
(American Institute of Physics, 2012-11-10)Use the DOI address to see the article abstract. A subscription or fee may be necessary to view the article. -
In Situ Study of the Role of Substrate Temperature during Atomic Layer Deposition of HfO2 on InP
(2013-10-16)The dependence of the "self cleaning" effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO₂ on various chemically treated and native oxide InP (100) substrates is investigated ... -
Selectivity of Metal Oxide Atomic Layer Deposition on Hydrogen Terminated and Oxidized Si(001)-(2x1) Surface
(A V S Amer Inst Physics, 2014-02-10)In this work, the authors used density-functional theory methods and x-ray photoelectron spectroscopy to study the chemical composition and growth rate of HfO₂, Al₂O₃, and TiO₂ thin films grown by in-situ atomic layer ... -
Accumulation Capacitance Frequency Dispersion of Ⅲ-Ⅴ Metal-Insulator-Semiconductor Devices due to Disorder Induced Gap States
(American Institute of Physics Inc., 2014-07-07)The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical ... -
Nucleation and Growth of WSe₂: Enabling Large Grain Transition Metal Dichalcogenides
(IOP Publishing Ltd, 2017-09-22)The limited grain size (< 200 nm) for transition metal dichalcogenides (TMDs) grown by molecular beam epitaxy (MBE) reported in the literature thus far is unsuitable for high-performance device applications. In this work, ... -
A Kinetic Monte Carlo Simulation Method of Van Der Waals Epitaxy for Atomistic Nucleation-Growth Processes of Transition Metal Dichalcogenides
(Nature Publishing Group, 2018-08-31)Controlled growth of crystalline solids is critical for device applications, and atomistic modeling methods have been developed for bulk crystalline solids. Kinetic Monte Carlo (KMC) simulation method provides detailed ... -
A Crystalline Oxide Passivation on In₀․₅₃Ga₀․₄₇As (100)
(American Institute of Physics Inc, 2018-09-24)The passivation of In₀․₅₃Ga₀․₄₇As surfaces is highly desired for transistor performance. In this study, the feasibility of a crystalline oxide passivation on In₀․₅₃Ga₀․₄₇As (100) is demonstrated experimentally. The (3 × ... -
UV-Ozone Functionalization of 2D Materials
(Springer, 2018-10-04)Integrating two-dimensional (2D) materials into the current nanoelectronic process requires control over the deposition of gate oxides onto these materials. Atomic layer deposition (ALD) relies on surface dangling bonds ... -
Covalent Nitrogen Doping in Molecular Beam Epitaxy-Grown and Bulk WSe₂
(American Institute of Physics Inc, 2018-10-22)Covalent p-type doping of WSe₂ thin films grown by molecular beam epitaxy and WSe₂ exfoliated from bulk crystals is achieved via remote nitrogen plasma exposure. X-ray photoelectron and Raman spectroscopies indicate ... -
High-κ Dielectric on ReS₂: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al₂O₃
(MDPI AG, 2019-03-30)We report an excellent growth behavior of a high-κ dielectric on ReS₂ , a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al₂O₃ thin film on the UV-Ozone pretreated surface ... -
Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature
(Wiley-VCH Verlag, 2019-06-11)The interconnect half-pitch size will reach ≈20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be >4 nm to ensure acceptable liner and diffusion barrier properties. ... -
In Situ Study of E-Beam Al And Hf Metal Deposition on Native Oxide InP (100)
The interfacial chemistry of thin Al (∼3 nm) and Hf (∼2 nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ ... -
MoS₂ Functionalization for Ultra-Thin Atomic Layer Deposited Dielectrics
The effect of room temperature ultraviolet-ozone (UV-O₃) exposure of MoS₂ on the uniformity of subsequent atomic layer deposition of Al₂O₃ is investigated. It is found that a UV-O₃ pre-treatment removes adsorbed carbon ... -
A Crystalline Oxide Passivation for Al₂O₃/AlGaN/GaN
In situ X-ray photoelectron spectroscopy and low energy electron diffraction are performed to study the formation of a crystalline oxide on the AlGaN surface. The oxidation of the AlGaN surface is prepared by annealing and ... -
Trimethyl-Aluminum and Ozone Interactions with Graphite in Atomic Layer Deposition of Al2O3
A study of the chemical interactions between the atomic layer deposition (ALD) Al2O3 precursors trimethlyaluminum (TMA) and ozone (TMA/O-3) and sp(2) carbon surfaces is presented. In-situ x-ray photoelectron spectroscopy ... -
Investigation of Arsenic and Antimony Capping Layers, and Half Cycle Reactions During Atomic Layer Deposition of Al₂O₃ on GaSb(100)
In-situ monochromatic x-ray photoelectron spectroscopy, low energy electron diffraction, ion scattering spectroscopy, and transmission electron microscopy are used to examine the GaSb(100) surfaces grown by molecular beam ... -
Tuning Electronic Transport in Epitaxial Graphene-Based Van Der Waals Heterostructures
Two-dimensional tungsten diselenide (WSe₂) has been used as a component in atomically thin photovoltaic devices, field effect transistors, and tunneling diodes in tandem with graphene. In some applications it is necessary ... -
Chemical and Electrical Characterization of the HfO2/InAlAs Interface
InAlAs has the potential to be used as a barrier layer in buried channel quantum well field effect transistor devices due to favorable lattice-matching and carrier confinement properties with InGaAs. Field effect device ... -
Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon
Many researchers have used nitrogen (N) as a dopant and/or N-containing functional groups to enhance the capacitance of carbon electrodes of electrical double layer (EDL) capacitors. However, the physical mechanism(s) ...