Now showing items 1-5 of 5
Selectivity of Metal Oxide Atomic Layer Deposition on Hydrogen Terminated and Oxidized Si(001)-(2x1) Surface
(A V S Amer Inst Physics, 2014-02-10)
In this work, the authors used density-functional theory methods and x-ray photoelectron spectroscopy to study the chemical composition and growth rate of HfO₂, Al₂O₃, and TiO₂ thin films grown by in-situ atomic layer ...
A Crystalline Oxide Passivation on In₀․₅₃Ga₀․₄₇As (100)
(American Institute of Physics Inc, 2018-09-24)
The passivation of In₀․₅₃Ga₀․₄₇As surfaces is highly desired for transistor performance. In this study, the feasibility of a crystalline oxide passivation on In₀․₅₃Ga₀․₄₇As (100) is demonstrated experimentally. The (3 × ...
Al₂O₃ on WSe₂ by Ozone Based Atomic Layer Deposition: Nucleation and Interface Study
In this work, the atomic layer deposition process using ozone and trimethylaluminum (TMA) for the deposition of Al₂O₃ films on WSe₂ was investigated. It was found that the ozone-based atomic layer deposition enhanced the ...
In Situ Plasma Enhanced Atomic Layer Deposition Half Cycle Study of Al₂O₃ on AlGaN/GaN High Electron Mobility Transistors
A half cycle study of plasma enhanced atomic layer deposited (PEALD) Al₂O₃ on AlGaN is investigated using in situ X-ray photoelectron spectroscopy, low energy ion scattering, and ex situ electrical characterizations. A ...
In situ atomic layer deposition half cycle study of Al2O 3 growth on AlGaN
(American Institute of Physics, 2012-11-10)
Use the DOI address to see the article abstract. A subscription or fee may be necessary to view the article.