Quevedo-López, Manuel A.
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Manuel Quevedo-López is a Professor of Material Sciences and Engineering and serves as the head of the department. Learn more about Professor Quevedo-López from the Department of Materials Science and Engineering, his Curriculum Vitae , and his Research Explorer page.
Works in Treasures @ UT Dallas are made available exclusively for educational purposes such as research or instruction. Literary rights, including copyright for published works held by the creator(s) or their heirs, or other third parties may apply. All rights are reserved unless otherwise indicated by the copyright owner(s).
Recent Submissions
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Toxicological Assessment of Cross-Linked Beads of Chitosan-Alginate and Aspergillus australensis Biomass, with Efficiency as Biosorbent for Copper Removal
(MDPI, 2019-01-30)Sorbent materials of biological origin are considered as an alternative to the use of traditional methods in order to remove heavy metals. Interest in using these materials has increased over the past years due to their ... -
Application of ZnO Schottky Diodes in Rectifier Circuits for Implementation in Energy Harvesting
(Inst Materials Physics, 2019-02-21)This work presents the results obtained from the SPICE simulation of a full-wave bridge rectifier circuit, a double half-wave rectifier circuit and a half-wave rectifier circuit, each at a frequency of 816MHz and low ... -
Optical Properties of P-Type SnOₓ Thin Films Deposited by DC Reactive Sputtering
(Springer, 2018-11-23)Refractive index (n), extinction coefficient (k), effective complex dielectric function (epsilon) and band gap energy (Eg) of p-type SnOₓ thin films from 0.75 to 4eV are studied. 25 nm thick films were deposited by direct ... -
Wafer Scale Quasi Single Crystalline MoS₂ Realized By Epitaxial Phase Conversion
(IOP Publishing Ltd, 2018-12-17)Vapor-solid phase reaction (VSPR) is a two-step process for synthesizing 2D MoS₂. In the first step, a precursor film such as molybdenum oxide is grown on a substrate, followed by a sulfurization process at elevated ... -
Positive Bias Instability in ZnO TFTs with Al₂O₃ Gate Dielectric
(Institute of Electrical and Electronics Engineers Inc., 2019-03-31)Positive bias instability stress (PBI) was done on ZnO thin-film transistors (TFTs) with Al₂O₃ deposition at 100°C and 250°C. The threshold voltage (VT), transconductance (g ₘ), and subthreshold slope (SS) were monitored ... -
Structural, Chemical and Electrical Properties of CdS Thin Films Fabricated by Pulsed Laser Deposition Using Varying Background Gas Pressure
(Elsevier B.V., 2019-05-07)The present study outlines the evolution of the composition, strain and electrical properties of cadmium sulfide (CdS) thin films deposited via pulsed laser deposition (PLD), under varied chamber pressure ranging from 0.13 ... -
Low-Temperature Thin Film Transistors Based on Pulsed Laser Deposited CdS Active Layers
Cadmium sulfide (CdS) thin films as n-type semiconductor material were deposited by pulsed laser deposition by varying the argon pressure at room temperature. The structural, morphological and stoichiometric characteristics ... -
Effects of Titanium Oxide Surface Properties on Bone-Forming and Soft Tissue-Forming Cells
Background: Previous studies have concluded that certain titanium oxide (TiO₂) surface properties promote bone-forming cell attachment. However, no comprehensive studies have investigated the effects of TiO₂ surface and ... -
Dual-Gate MoS₂ Transistors with Sub-10 NM Top-Gate High-K Dielectrics
High quality sub-10 nm high-k dielectrics are deposited on top of MoS₂ and evaluated using a dual-gate field effect transistor configuration. Comparison between top-gate HfO₂ and an Al₂O₃/HfO₂ bilayer shows significant ... -
Developing Analysis Criteria to Adjust the Growth of CdS and CdTe Thin Films Using the PLD Technique, for Solar Cell Purposes
The goal of this research is to obtain technical information of the conformation of the CdTe/CdS junctions deposited on an ITO/Glass substrate. Their physical conditions to deposit each single layer will enable appropriate ... -
Dielectric Gate Applications of PMMA-TiO₂ Hybrid Films in ZnO-Based Thin Film Transistors
In this paper we report a low temperature sol-gel deposition process of organic-inorganic PMMA-TiO₂ hybrid films for applications to gate dielectric layers in field-effect (FE) thin film transistors (TFT), using sputtered ... -
CdCl₂ Treatment on Chemically Deposited CdS Active Layers in Thin Film Transistors
In this work CdS layers were deposited by an ammonia-free chemical bath deposition process on SiO₂/p-Si substrates as active layers of thin film transistors (TFT). The electrical characteristics of the CdS-based TFT with ... -
Thin Film Cadmium Telluride Charged Particle Sensors for Large Area Neutron Detectors
Thin film semiconductor neutron detectors are an attractive candidate to replace ³He neutron detectors, due to the possibility of low cost manufacturing and the potential for large areas. Polycrystalline CdTe is found to ... -
Evaluation of CdS Interfacial Layers in ZnO Nanowire/Poly(3-Hexylthiophene) Solar Cells
We prepare ZnO:poly(3-hexylthiophene) (P3HT) thin-film solar cells and ZnO nanowire:P3HT nanostructured solar cells and evaluate the effect of adding an interfacial layer between the ZnO and P3HT as a function of the ... -
Optimizing Diode Thickness for Thin-Film Solid State Thermal Neutron Detectors
(American Institute of Physics, 2012-10-04)In this work, we investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. We evaluate several diode materials, Si, CdTe, GaAs, C (diamond), and ZnO, and two neutron ...
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