Now showing items 13-21 of 21

    • Large Ferroelectric Polarization of TiN/Hf₀․₅Zr₀․₅0₂ Capacitors Due to Stress-Induced Crystallization at Low Thermal Budget 

      Kim, Si Joon; Narayan, Dushyant; Lee, Jae-Gil; Mohan, Jaidah; Lee, Joy S.; Lee, Jaebeom; Kim, Harrison S.; Byun, Young-Chul; Lucero, Antonio T.; Young, Chadwin D.; Summerfelt, Scott R.; San, Tamer; Colombo, Luigi; Kim, Jiyoung (Amer Inst Physics, 2018-10-22)
      We report on atomic layer deposited Hf₀․₅Zr₀․₅0₂ (HZO)-based capacitors which exhibit excellent ferroelectric (FE) characteristics featuring a large switching polarization (45 μC/cm²) and a low FE saturation voltage (~1.5V) ...
    • Low Temperature Synthesis of Graphite on Ni Films Using Inductively Coupled Plasma Enhanced CVD 

      Cheng, Lanxia; Yun, Kayoung; Lucero, Antonio; Huang, Jie; Meng, Xin; Lian, Guoda; Nam, Ho-Seok; Wallace, Robert M.; Kim, Moon J.; Venugopal, Archana; Colombo, Luigi; Kim, Jiyoung
      Controlled synthesis of graphite at low temperatures is a desirable process for a number of applications. Here, we present a study on the growth of thin graphite films on polycrystalline Ni films at low temperatures, about ...
    • MoS₂ Functionalization for Ultra-Thin Atomic Layer Deposited Dielectrics 

      Azcatl, Angelica; McDonnell, Stephen; KC, Santosh; Peng, Xin; Dong, Hong; Qin, Xiaoye; Addou, Rafik; Mordi, Greg I.; Lu, Ning; Kim, Jiyoung; Kim, Moon J.; Cho, Kyeongjae; Wallace, Robert M.
      The effect of room temperature ultraviolet-ozone (UV-O₃) exposure of MoS₂ on the uniformity of subsequent atomic layer deposition of Al₂O₃ is investigated. It is found that a UV-O₃ pre-treatment removes adsorbed carbon ...
    • Nucleation and Growth of WSe₂: Enabling Large Grain Transition Metal Dichalcogenides 

      Yue, Ruoyu; Nie, Yifan; Walsh, Lee A.; Addou, Rafik; Liang, Chaoping; Lu, Ning; Barton, Adam T.; Zhu, Hui; Che, Zifan; Barrera, Diego; Cheng, Lanxia; Cha, Pil-Ryung; Chabal, Yves J.; Hsu, Julia W. P.; Kim, Jiyoung; Kim, Moon J.; Colombo, Luigi; Wallace, Robert M.; Cho, Kyeongjae; Hinkle, Christopher L. (IOP Publishing Ltd, 2017-09-22)
      The limited grain size (< 200 nm) for transition metal dichalcogenides (TMDs) grown by molecular beam epitaxy (MBE) reported in the literature thus far is unsuitable for high-performance device applications. In this work, ...
    • Organic-Inorganic Hybrid Semiconductor Thin Films Deposited Using Molecular-Atomic Layer Deposition (MALD) 

      Huang, Jie; Zhang, Hengji; Lucero, Antonio; Cheng, Lanxia; KC, Santosh; Wang, Jian; Hsu, Julia W. P.; Cho, Kyeongjae; Kim, Jiyoung
      Molecular-atomic layer deposition (MALD) is employed to fabricate hydroquinone (HQ)/diethyl zinc (DEZ) organic-inorganic hybrid semiconductor thin films with accurate thickness control, sharp interfaces, and low deposition ...
    • Realization of Spatially Addressable Library by a Novel Combinatorial Approach on Atomic Layer Deposition: A Case Study of Zinc Oxide 

      Kim, Harrison Sejoon; Lee, Joy S.; Kim, S. J.; Lee, Jaebeom; Lucero, Antonio T.; Sung, M. M.; Kim, Jiyoung (American Chemical Society, 2019-05-07)
      Though the synthesis of libraries of multicomponent metal oxide systems is prevalent using the combinatorial approach, the combinatorial approach has been rarely realized in studying simple metal oxides, especially applied ...
    • Selective Atomic Layer Deposition with Electron-Beam Patterned Self-Assembled Monolayers 

      Huang, Jie; Lee, Mingun; Kim, Jiyoung
      The authors selectively deposited nanolines of titanium oxide (TiO(2)) through atomic layer deposition (ALD) using an octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) as a nucleation inhibition layer. Electron-beam ...
    • Top-Down Fabrication of High-Uniformity Nanodiamonds by Self-Assembled Block Copolymer Masks 

      Bersin, E.; Cotlet, M.; Doerk, G.; Lienhard, B.; Zheng, J; Kim, Harrison Sejoon; Byun, Young-Chui; Nam, C. -Y.; Kim, Jiyoung; Black, C. T.; Englund, D.
      Nanodiamonds hosting colour centres are a promising material platform for various quantum technologies. The fabrication of non-aggregated and uniformly-sized nanodiamonds with systematic integration of single quantum ...
    • ZnO Composite Nanolayer with Mobility Edge Quantization for Multi-Value Logic Transistors 

      Lee, L.; Hwang, Jeongwoon; Jung, J. W.; Kim, J.; Lee, H. -I; Heo, S.; Yoon, M.; Choi, S.; Van Long, N.; Park, J.; Jeong, J. W.; Kim, Jiyoung; Kim, K. R.; Kim, D. H.; Im, S.; Lee, B. H.; Cho, Kyeongjae; Sung, M. M. (Nature Publishing Group, 2019-04-30)
      A quantum confined transport based on a zinc oxide composite nanolayer that has conducting states with mobility edge quantization is proposed and was applied to develop multi-value logic transistors with stable intermediate ...