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MoS₂ Functionalization for Ultra-Thin Atomic Layer Deposited Dielectrics
The effect of room temperature ultraviolet-ozone (UV-O₃) exposure of MoS₂ on the uniformity of subsequent atomic layer deposition of Al₂O₃ is investigated. It is found that a UV-O₃ pre-treatment removes adsorbed carbon ...
ZnO Composite Nanolayer with Mobility Edge Quantization for Multi-Value Logic Transistors
(Nature Publishing Group, 2019-04-30)
A quantum confined transport based on a zinc oxide composite nanolayer that has conducting states with mobility edge quantization is proposed and was applied to develop multi-value logic transistors with stable intermediate ...
Organic-Inorganic Hybrid Semiconductor Thin Films Deposited Using Molecular-Atomic Layer Deposition (MALD)
Molecular-atomic layer deposition (MALD) is employed to fabricate hydroquinone (HQ)/diethyl zinc (DEZ) organic-inorganic hybrid semiconductor thin films with accurate thickness control, sharp interfaces, and low deposition ...
Nucleation and Growth of WSe₂: Enabling Large Grain Transition Metal Dichalcogenides
(IOP Publishing Ltd, 2017-09-22)
The limited grain size (< 200 nm) for transition metal dichalcogenides (TMDs) grown by molecular beam epitaxy (MBE) reported in the literature thus far is unsuitable for high-performance device applications. In this work, ...