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MoS₂ Functionalization for Ultra-Thin Atomic Layer Deposited Dielectrics
The effect of room temperature ultraviolet-ozone (UV-O₃) exposure of MoS₂ on the uniformity of subsequent atomic layer deposition of Al₂O₃ is investigated. It is found that a UV-O₃ pre-treatment removes adsorbed carbon ...
Engineering The Palladium-WSe₂ Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts
(Amer Chemical Soc, 2018-12-07)
Palladium has been widely employed as a hole contact to WSe₂ and has enabled, at times, the highest WSe₂ transistor performance. However, there are orders of magnitude variation across the literature in Pd-WSe₂ contact ...
Nucleation and Growth of WSe₂: Enabling Large Grain Transition Metal Dichalcogenides
(IOP Publishing Ltd, 2017-09-22)
The limited grain size (< 200 nm) for transition metal dichalcogenides (TMDs) grown by molecular beam epitaxy (MBE) reported in the literature thus far is unsuitable for high-performance device applications. In this work, ...
Low Temperature Synthesis of Graphite on Ni Films Using Inductively Coupled Plasma Enhanced CVD
Controlled synthesis of graphite at low temperatures is a desirable process for a number of applications. Here, we present a study on the growth of thin graphite films on polycrystalline Ni films at low temperatures, about ...