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In situ atomic layer deposition half cycle study of Al2O 3 growth on AlGaN
(American Institute of Physics, 2012-11-10)
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Investigation of interfacial oxidation control using sacrificial metallic Al and La passivation layers on InGaAs
(2012-05-25)
The ability of metallic Al and La interlayers to control the oxidation of InGaAs substrates is examined by monochromatic x-ray photoelectron spectroscopy (XPS) and compared to the interfacial chemistry of atomic layer ...