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Ferroelectric Hf₀․₅Zr₀․₅O₂ Thin Films: A Review of Recent Advances
Ferroelectricity in HfO₂-based materials, especially Hf₀․₅Zr₀․₅O₂ (HZO), is today one of the most attractive topics because of its wide range of applications in ferroelectric random-access memory, ferroelectric field-effect ...
Large Ferroelectric Polarization of TiN/Hf₀․₅Zr₀․₅0₂ Capacitors Due to Stress-Induced Crystallization at Low Thermal Budget
(Amer Inst Physics, 2018-10-22)
We report on atomic layer deposited Hf₀․₅Zr₀․₅0₂ (HZO)-based capacitors which exhibit excellent ferroelectric (FE) characteristics featuring a large switching polarization (45 μC/cm²) and a low FE saturation voltage (~1.5V) ...
Engineering The Palladium-WSe₂ Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts
(Amer Chemical Soc, 2018-12-07)
Palladium has been widely employed as a hole contact to WSe₂ and has enabled, at times, the highest WSe₂ transistor performance. However, there are orders of magnitude variation across the literature in Pd-WSe₂ contact ...
Impurity and Silicate Formation Dependence on O₃ Pulse Time and the Growth Temperature in Atomic-Layer-Deposited La₂O₃ Thin Films
(American Institute of Physics Inc, 2018-09-24)
Atomic-layer-deposited La₂O₃ films were grown on Si with different O₃ pulse times and growth temperatures. The interfacial reactions and impurity behaviors were observed using in situ X-ray photoelectron spectroscopy. ...