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    • Erik Jonsson School of Engineering and Computer Science
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    • Kim, Jiyoung
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    Realization of Spatially Addressable Library by a Novel Combinatorial Approach on Atomic Layer Deposition: A Case Study of Zinc Oxide 

    Kim, Harrison Sejoon; Lee, Joy S.; Kim, S. J.; Lee, Jaebeom; Lucero, Antonio T.; Sung, M. M.; Kim, Jiyoung (American Chemical Society, 2019-05-07)
    Though the synthesis of libraries of multicomponent metal oxide systems is prevalent using the combinatorial approach, the combinatorial approach has been rarely realized in studying simple metal oxides, especially applied ...
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    In situ atomic layer deposition half cycle study of Al2O 3 growth on AlGaN 

    Brennan, Barry; Qin, Xiaoye; Dong, Hong; Kim, Jiyoung; Wallace, Robert M. (American Institute of Physics, 2012-11-10)
    Use the DOI address to see the article abstract. A subscription or fee may be necessary to view the article.
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    Hydroquinone-ZnO Nano-Laminate Deposited by Molecular-Atomic Layer Deposition 

    Huang, Jie; Lucero, Antonio T.; Cheng, Lanxia; Hwang, Hyeon Jun; Ha, M. -W; Kim, Jiyoung
    In this study, we have deposited organic-inorganic hybrid semiconducting hydroquinone (HQ)/zinc oxide (ZnO) superlattices using molecular-atomic layer deposition, which enables accurate control of film thickness, excellent ...
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    Organic-Inorganic Hybrid Semiconductor Thin Films Deposited Using Molecular-Atomic Layer Deposition (MALD) 

    Huang, Jie; Zhang, Hengji; Lucero, Antonio; Cheng, Lanxia; KC, Santosh; Wang, Jian; Hsu, Julia W. P.; Cho, Kyeongjae; Kim, Jiyoung
    Molecular-atomic layer deposition (MALD) is employed to fabricate hydroquinone (HQ)/diethyl zinc (DEZ) organic-inorganic hybrid semiconductor thin films with accurate thickness control, sharp interfaces, and low deposition ...
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    Impurity and Silicate Formation Dependence on O₃ Pulse Time and the Growth Temperature in Atomic-Layer-Deposited La₂O₃ Thin Films 

    Park, Tae Joo; Byun, Young-Byun; Wallace, Robert M.; Kim, Jiyoung (American Institute of Physics Inc, 2018-09-24)
    Atomic-layer-deposited La₂O₃ films were grown on Si with different O₃ pulse times and growth temperatures. The interfacial reactions and impurity behaviors were observed using in situ X-ray photoelectron spectroscopy. ...
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    Ferroelectric TiN/Hf₀.₅Zr₀.₅O₂/Tin Capacitors with Low-Voltage Operation and High Reliability for Next-Generation FRAM Applications 

    Kim, Si Joon; Mohan, Jaidah; Young, Chadwin D.; Colombo, Luigi; Kim, Jiyoung; Summerfelt, S. R.; San, T.
    In this study, we investigated the ferroelectric properties of Hf₀.₅Zr₀.₅O₂ (HZO) thin films with different thicknesses (5-20 nm) deposited by atomic layer deposition for the development of future ferroelectric random ...
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    Effect of Film Thickness on the Ferroelectric and Dielectric Properties of Low-Temperature (400 ⁰C) Hf₀.₅Zr₀.₅O₂ Films 

    Kim, Si Joon; Mohan. Jaidah; Lee, Jaebeom; Lee, Joy S.; Lucero, Antonion T.; Young, Chandwin D.; Colombo, Luigi; Summerfelt, Scott R.; San, Tamer; Kim, Jiyoung
    We report on the effect of the Hf₀.₅Zr₀.₅O₂ (HZO) film thickness on the ferroelectric and dielectric properties using pulse write/read measurements. HZO films of thicknesses ranging from 5 to 20 nm were annealed at 400 ...

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    AuthorKim, Jiyoung (7)Cheng, Lanxia (2)Colombo, Luigi (2)Huang, Jie (2)Kim, Si Joon (2)Lee, Jaebeom (2)Lee, Joy S. (2)Lucero, Antonio T. (2)Wallace, Robert M. (2)Brennan, Barry (1)... View MoreSubject
    Atomic layer deposition (7)
    Thin films (3)Ferroelectric thin films (2)Zinc oxide (2)Analog CMOS integrated circuits (1)Carrier mobility (1)Crystals (1)Density functionals (1)Dielectric films (1)Electric conductivity (1)... View MoreDate Issued2012 (1)2018 (1)2019 (1)Has File(s)Yes (7)

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