Now showing items 1-4 of 4
Engineering The Palladium-WSe₂ Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts
(Amer Chemical Soc, 2018-12-07)
Palladium has been widely employed as a hole contact to WSe₂ and has enabled, at times, the highest WSe₂ transistor performance. However, there are orders of magnitude variation across the literature in Pd-WSe₂ contact ...
Impurity and Silicate Formation Dependence on O₃ Pulse Time and the Growth Temperature in Atomic-Layer-Deposited La₂O₃ Thin Films
(American Institute of Physics Inc, 2018-09-24)
Atomic-layer-deposited La₂O₃ films were grown on Si with different O₃ pulse times and growth temperatures. The interfacial reactions and impurity behaviors were observed using in situ X-ray photoelectron spectroscopy. ...
Investigation of interfacial oxidation control using sacrificial metallic Al and La passivation layers on InGaAs
The ability of metallic Al and La interlayers to control the oxidation of InGaAs substrates is examined by monochromatic x-ray photoelectron spectroscopy (XPS) and compared to the interfacial chemistry of atomic layer ...
High-κ Dielectric on ReS₂: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al₂O₃
(MDPI AG, 2019-03-30)
We report an excellent growth behavior of a high-κ dielectric on ReS₂ , a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al₂O₃ thin film on the UV-Ozone pretreated surface ...