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Effect of Film Thickness on the Ferroelectric and Dielectric Properties of Low-Temperature (400 ⁰C) Hf₀.₅Zr₀.₅O₂ Films

Kim, Si Joon; Mohan. Jaidah; Lee, Jaebeom; Lee, Joy S.; Lucero, Antonion T.; Young, Chandwin D.; Colombo, Luigi; Summerfelt, Scott R.; San, Tamer; Kim, Jiyoung

We report on the effect of the Hf₀.₅Zr₀.₅O₂ (HZO) film thickness on the ferroelectric and dielectric properties using pulse write/read measurements. HZO films of thicknesses ranging from 5 to 20 nm were annealed at 400 ...