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dc.contributor.authorBrennan, Barryen_US
dc.contributor.authorMilojevic, Markoen_US
dc.contributor.authorContreras-Guerrero, Roccioen_US
dc.contributor.authorKim, Hyun-Chulen_US
dc.contributor.authorLopez-Lopez, Maximoen_US
dc.contributor.authorKim, Jiyoungen_US
dc.contributor.authorWallace, Robert M.en_US
dc.date.accessioned2013-08-01T19:23:49Z
dc.date.available2013-08-01T19:23:49Z
dc.date.created2012-02-16en_US
dc.date.issued2012-05-25en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/2799
dc.description.abstractThe ability of metallic Al and La interlayers to control the oxidation of InGaAs substrates is examined by monochromatic x-ray photoelectron spectroscopy (XPS) and compared to the interfacial chemistry of atomic layer deposition (ALD) of Al2O3 directly on InGaAs surfaces. Al and La layers were deposited by electron-beam and effusion cell evaporators, respectively, on In0.53Ga0.47As samples with and without native oxides present. It was found that both metals are extremely efficient at scavenging oxygen from III-V native oxides, which are removed below XPS detection limits prior to ALD growth. However, metallic Ga//In/As species are simultaneously observed to form at the semiconductor-metal interface. Upon introduction of the samples to the ALD chamber, these metal bonds are seen to oxidize, leading to Ga/In-O bond growth that cannot be controlled by subsequent trimethyl-aluminum (TMA) exposures. Deposition on an oxide-free InGaAs surface results in both La and Al atoms displacing group III atoms near the surface of the semiconductor. The displaced substrate atoms tend to partially oxidize and leave both metallic and III-V oxide species trapped below the interlayers where they cannot be "cleaned-up" by TMA. For both Al and La layers the level of Ga-O bonding detected at the interface appears larger then that seen following ALD directly on a clean surface.en_US
dc.relation.urihttp://dx.doi.org/10.1116/1.4721276en_US
dc.rights© 2012 American Vacuum Societyen_US
dc.subjectPhotoelectronsen_US
dc.subjectIndiumen_US
dc.subjectX-ray photoelectron spectroscopyen_US
dc.subjectOxidationen_US
dc.titleInvestigation of interfacial oxidation control using sacrificial metallic Al and La passivation layers on InGaAsen_US
dc.typetexten_US
dc.type.genrearticleen_US
dc.identifier.bibliographicCitationBrennan, Barry, Marko Milojevic, Roccio Contreras-Guerrero, Hyun-Chul Kim, et al. 2012. "Investigation of Interfacial Oxidation Control Using Sacrificial Metallic Al and La Passivation Layers on InGaAs." Journal of Vacuum Science & Technology B 30(4): 04E104-1 to 04E104-8.
dc.source.journalJournal of Vacuum Science and Technology Ben_US
dc.identifier.volume30en_US
dc.identifier.issue4en_US
dc.identifier.startpage04E104en_US
dc.contributor.VIAF70133685 (Kim, J)


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