Now showing items 12-21 of 21

    • Low Temperature Synthesis of Graphite on Ni Films Using Inductively Coupled Plasma Enhanced CVD 

      Cheng, Lanxia; Yun, Kayoung; Lucero, Antonio; Huang, Jie; Meng, Xin; Lian, Guoda; Nam, Ho-Seok; Wallace, Robert M.; Kim, Moon J.; Venugopal, Archana; Colombo, Luigi; Kim, Jiyoung
      Controlled synthesis of graphite at low temperatures is a desirable process for a number of applications. Here, we present a study on the growth of thin graphite films on polycrystalline Ni films at low temperatures, about ...
    • Luminescent LaF₃:Ce-Doped Organically Modified Nanoporous Silica Xerogels 

      Yao, Mingzhen; Hall, Ryan; Chen, Wei; Mohite, Dhairyashil P.; Leventis, Nicholas; Lu, Ning; Wang, Jinguo; Kim, Moon J.; Luo, Huiyang; Lu, Hongbing
      Organically modified silica compounds (ORMOSILs) were synthesized by a sol-gel method from amine-functionalized 3-aminopropyl triethoxylsilane and tetramethylorthosilicate and were doped in situ with LaF3:Ce nanoparticles, ...
    • Metal-Organic Chemical Vapor Deposition of High Quality, High Indium Composition N-Polar InGaN Layers for Tunnel Devices 

      Lund, C.; Romanczyk, B.; Catalano, Massimo; Wang, Qingxiao; Li, W.; DiGiovanni, D.; Kim, Moon J.; Fay, P.; Nakamura, S.; DenBaars, S. P.; Mishra, U. K.; Keller, S. (American Institute of Physics Inc, 2018-08-24)
      In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling ...
    • MoS₂ Functionalization for Ultra-Thin Atomic Layer Deposited Dielectrics 

      Azcatl, Angelica; McDonnell, Stephen; KC, Santosh; Peng, Xin; Dong, Hong; Qin, Xiaoye; Addou, Rafik; Mordi, Greg I.; Lu, Ning; Kim, Jiyoung; Kim, Moon J.; Cho, Kyeongjae; Wallace, Robert M.
      The effect of room temperature ultraviolet-ozone (UV-O₃) exposure of MoS₂ on the uniformity of subsequent atomic layer deposition of Al₂O₃ is investigated. It is found that a UV-O₃ pre-treatment removes adsorbed carbon ...
    • New Intrinsic Mechanism on Gum-Like Superelasticity of Multifunctional Alloys 

      Liu, J. -P; Wang, Y. -D; Hao, Y. -L; Wang, Y.; Nie, Z. -H; Wang, D.; Ren, Y.; Lu, Z. -P; Wang, Jinguo; Wang, H.; Hui, X.; Lu, Ning; Kim, Moon J.; Yang, R.
      Ti-Nb-based Gum Metals exhibit extraordinary superelasticity with ultralow elastic modulus, superior strength and ductility, and a peculiar dislocation-free deformation behavior, most of which challenge existing theories ...
    • Nucleation and Growth of WSe₂: Enabling Large Grain Transition Metal Dichalcogenides 

      Yue, Ruoyu; Nie, Yifan; Walsh, Lee A.; Addou, Rafik; Liang, Chaoping; Lu, Ning; Barton, Adam T.; Zhu, Hui; Che, Zifan; Barrera, Diego; Cheng, Lanxia; Cha, Pil-Ryung; Chabal, Yves J.; Hsu, Julia W. P.; Kim, Jiyoung; Kim, Moon J.; Colombo, Luigi; Wallace, Robert M.; Cho, Kyeongjae; Hinkle, Christopher L. (IOP Publishing Ltd, 2017-09-22)
      The limited grain size (< 200 nm) for transition metal dichalcogenides (TMDs) grown by molecular beam epitaxy (MBE) reported in the literature thus far is unsuitable for high-performance device applications. In this work, ...
    • Realization of the First GaN Based Tunnel Field-Effect Transistor 

      Chaney, A.; Turski, H.; Nomoto, K.; Wang, Qingxiao; Hu, Z.; Kim, Moon J.; Xing, H. G.; Jena, D.
      Tunnel field-effect transistors (TFETs) offer the means to surpass the subthreshold swing (SS) limit of 60 mV/dec that limits MOSFETs. While MOSFETs rely on modulating a potential barrier, which is subject to a Boltzmann ...
    • Structural Effect of Two-Dimensional BNNS on Grain Growth Suppressing Behaviors in Al-Matrix Nanocomposites 

      Nam, Seungjin; Chang, Kunok; Lee, Woonki; Kim, Moon J.; Hwang, Jun Yeon; Choi, Hyunjoo (Nature Publishing Group, 2018-10-22)
      While nanocrystalline (NC) metals exhibit superior strength to conventional microcrystalline metals, their thermal instability has hampered their application at high temperatures. Herein, two-dimensional (2D) boron nitride ...
    • Tailoring Interface Structure and Enhancing Thermal Conductivity of Cu/Diamond Composites by Alloying Boron to the Cu Matrix 

      Bai, G.; Wang, Luhua; Zhang, Y.; Wang, X.; Wang, Jinguo; Kim, Moon J.; Zhang, H.
      Diamond particles reinforced Cu matrix (Cu/diamond) composites were prepared by alloying 0.1–1.0 wt% B to the Cu matrix in order to tailor the interface structure. The interface structure evolves from discrete triangular ...
    • Tunable Coefficient of Thermal Expansion of Cu-B/Diamond Composites Prepared by Gas Pressure Infiltration 

      Bai, G.; Zhang, Y.; Dai, J.; Wang, L.; Wang, X.; Wang, Jinguo; Kim, Moon J.; Chen, X.; Zhang, H.
      Cu-B matrix composites reinforced with diamond particles (Cu-B/diamond) were prepared by gas pressure infiltration (GPI). The effect of boron addition in the range of 0–1.0 wt% on the thermal expansion behavior of the ...