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Cubic Crystalline Erbium Oxide Growth on GaN(0001) by Atomic Layer Deposition
(Amer Inst Physics, 2018-10-22)
Growth of crystalline Er₂O₃, a rare earth sesquioxide, on GaN(0001) is described. Ex situ HCl and NH₄OH solutions and an in situ N₂ plasma are used to remove impurities on the GaN surface and result in a Ga/N stoichiometry ...
Al₂O₃ on WSe₂ by Ozone Based Atomic Layer Deposition: Nucleation and Interface Study
In this work, the atomic layer deposition process using ozone and trimethylaluminum (TMA) for the deposition of Al₂O₃ films on WSe₂ was investigated. It was found that the ozone-based atomic layer deposition enhanced the ...