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Cubic Crystalline Erbium Oxide Growth on GaN(0001) by Atomic Layer Deposition
(Amer Inst Physics, 2018-10-22)
Growth of crystalline Er₂O₃, a rare earth sesquioxide, on GaN(0001) is described. Ex situ HCl and NH₄OH solutions and an in situ N₂ plasma are used to remove impurities on the GaN surface and result in a Ga/N stoichiometry ...
Nucleation and Growth of WSe₂: Enabling Large Grain Transition Metal Dichalcogenides
(IOP Publishing Ltd, 2017-09-22)
The limited grain size (< 200 nm) for transition metal dichalcogenides (TMDs) grown by molecular beam epitaxy (MBE) reported in the literature thus far is unsuitable for high-performance device applications. In this work, ...