Now showing items 1-2 of 2
Metal-Organic Chemical Vapor Deposition of High Quality, High Indium Composition N-Polar InGaN Layers for Tunnel Devices
(American Institute of Physics Inc, 2018-08-24)
In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling ...
Engineering The Palladium-WSe₂ Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts
(Amer Chemical Soc, 2018-12-07)
Palladium has been widely employed as a hole contact to WSe₂ and has enabled, at times, the highest WSe₂ transistor performance. However, there are orders of magnitude variation across the literature in Pd-WSe₂ contact ...