Now showing items 1-2 of 2
Cubic Crystalline Erbium Oxide Growth on GaN(0001) by Atomic Layer Deposition
(Amer Inst Physics, 2018-10-22)
Growth of crystalline Er₂O₃, a rare earth sesquioxide, on GaN(0001) is described. Ex situ HCl and NH₄OH solutions and an in situ N₂ plasma are used to remove impurities on the GaN surface and result in a Ga/N stoichiometry ...
Metal-Organic Chemical Vapor Deposition of High Quality, High Indium Composition N-Polar InGaN Layers for Tunnel Devices
(American Institute of Physics Inc, 2018-08-24)
In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling ...