Now showing items 1-4 of 4
Cubic Crystalline Erbium Oxide Growth on GaN(0001) by Atomic Layer Deposition
(Amer Inst Physics, 2018-10-22)
Growth of crystalline Er₂O₃, a rare earth sesquioxide, on GaN(0001) is described. Ex situ HCl and NH₄OH solutions and an in situ N₂ plasma are used to remove impurities on the GaN surface and result in a Ga/N stoichiometry ...
Structural Effect of Two-Dimensional BNNS on Grain Growth Suppressing Behaviors in Al-Matrix Nanocomposites
(Nature Publishing Group, 2018-10-22)
While nanocrystalline (NC) metals exhibit superior strength to conventional microcrystalline metals, their thermal instability has hampered their application at high temperatures. Herein, two-dimensional (2D) boron nitride ...
Metal-Organic Chemical Vapor Deposition of High Quality, High Indium Composition N-Polar InGaN Layers for Tunnel Devices
(American Institute of Physics Inc, 2018-08-24)
In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling ...
Engineering The Palladium-WSe₂ Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts
(Amer Chemical Soc, 2018-12-07)
Palladium has been widely employed as a hole contact to WSe₂ and has enabled, at times, the highest WSe₂ transistor performance. However, there are orders of magnitude variation across the literature in Pd-WSe₂ contact ...