Show simple item record

dc.contributor.authorDong, Hongen_US
dc.contributor.authorSantosh, KCen_US
dc.contributor.authorAzcatl, Angelicaen_US
dc.contributor.authorCabrera, Wilfredoen_US
dc.contributor.authorQin, Xiaoyeen_US
dc.contributor.authorBrennan, Barryen_US
dc.contributor.authorZhernokletov, Dmitryen_US
dc.contributor.authorCho, Kyeongjieen_US
dc.contributor.authorWallace, Robert M.en_US
dc.date.accessioned2014-07-11T16:34:21Z
dc.date.available2014-07-11T16:34:21Z
dc.date.created2013-11-25
dc.date.submitted2013-10-07en_US
dc.identifier.citationDong, H., KC Santosh, A. Azcatl, W. Cabrera, et al. 2013. "In situ study of e-beam Al and Hf metal deposition on native oxide InP (100)." 114(20)en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/3649
dc.description.abstractThe interfacial chemistry of thin Al (∼3 nm) and Hf (∼2 nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The In-oxides are completely scavenged forming In-In/In-(Al/Hf) bonding after Al and Hf metal deposition. The P-oxide concentration is significantly decreased, and the P-oxide chemical states have been changed to more P-rich oxides upon metal deposition. Indium diffusion through these metals before and after annealing at 250 °C has also been characterized. First principles calculation shows that In has lower surface formation energy compared with Al and Hf metals, which is consistent with the observed indium diffusion behavior.en_US
dc.language.isoenen_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4833569en_US
dc.rights©2013 AIP Publishing LLCen_US
dc.subjectAnnealing of metalsen_US
dc.subjectOxidesen_US
dc.subjectIndium phosphideen_US
dc.titleIn Situ Study of E-Beam Al And Hf Metal Deposition on Native Oxide InP (100)en_US
dc.typetexten_US
dc.type.genrearticleen_US
dc.source.journalJournal of Applied Physicsen_US
dc.identifier.volume114en_US
dc.identifier.issue203505en_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record