Now showing items 1-3 of 3

    • Enhanced P-Type Behavior in 2D WSe2 via Chemical Defect Engineering 

      Rai, A.; Park, J. H.; Zhang, Chenxi; Kwak, I.; Wolf, S.; Vishwanath, S.; Lin, X.; Furdyna, J.; Xing, H. G.; Cho, Kyeongjae; Kummel, A. C.; Banerjee, S. K.
      Defect engineering of 2D semiconducting transition metal dichalcogenides (TMDCs) has been demonstrated to be a promising way to tune both their bandgaps and carrier concentrations. Moreover, controlled introduction of ...
    • Nucleation and Growth of WSe₂: Enabling Large Grain Transition Metal Dichalcogenides 

      Yue, Ruoyu; Nie, Yifan; Walsh, Lee A.; Addou, Rafik; Liang, Chaoping; Lu, Ning; Barton, Adam T.; Zhu, Hui; Che, Zifan; Barrera, Diego; Cheng, Lanxia; Cha, Pil-Ryung; Chabal, Yves J.; Hsu, Julia W. P.; Kim, Jiyoung; Kim, Moon J.; Colombo, Luigi; Wallace, Robert M.; Cho, Kyeongjae; Hinkle, Christopher L. (IOP Publishing Ltd, 2017-09-22)
      The limited grain size (< 200 nm) for transition metal dichalcogenides (TMDs) grown by molecular beam epitaxy (MBE) reported in the literature thus far is unsuitable for high-performance device applications. In this work, ...
    • The Band Structure Change of Hf₀.₅Zr₀.₅O₂/Ge System upon Post Deposition Annealing 

      Feng, Z.; Peng, Y.; Liu, H.; Sun, Y.; Wang, Y.; Meng, M.; Liu, H.; Wang, J.; Wu, R.; Wang, Xinglu; Cho, Kyeongjae; Han, G.; Dong, H. (Elsevier B.V., 2019-05-25)
      Hafnium zirconium oxide films have been utilized in negative capacitance (NC) field-effect transistors (FETs). The band alignment of semiconductor and HfZrOₓ film is critical to obtain high device performance. The band ...