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    • The Band Structure Change of Hf₀.₅Zr₀.₅O₂/Ge System upon Post Deposition Annealing 

      Feng, Z.; Peng, Y.; Liu, H.; Sun, Y.; Wang, Y.; Meng, M.; Liu, H.; Wang, J.; Wu, R.; Wang, Xinglu; Cho, Kyeongjae; Han, G.; Dong, H. (Elsevier B.V., 2019-05-25)
      Hafnium zirconium oxide films have been utilized in negative capacitance (NC) field-effect transistors (FETs). The band alignment of semiconductor and HfZrOₓ film is critical to obtain high device performance. The band ...