Now showing items 1-3 of 3

    • A Fermi-Level-Pinning-Free 1D Electrical Contact at the Intrinsic 2D MoS₂–Metal Junction 

      Yang, Z.; Kim, C.; Lee, K. Y.; Lee, M.; Appalakondaiah, S.; Ra, C. -H; Watanabe, K.; Taniguchi, T.; Cho, Kyeongiae; Hwang, E.; Hone, J.; Yoo, W. J. (Wiley-VCH Verlag, 2019-05-08)
      Currently 2D crystals are being studied intensively for use in future nanoelectronics, as conventional semiconductor devices face challenges in high power consumption and short channel effects when scaled to the quantum ...
    • MoS₂ Functionalization for Ultra-Thin Atomic Layer Deposited Dielectrics 

      Azcatl, Angelica; McDonnell, Stephen; KC, Santosh; Peng, Xin; Dong, Hong; Qin, Xiaoye; Addou, Rafik; Mordi, Greg I.; Lu, Ning; Kim, Jiyoung; Kim, Moon J.; Cho, Kyeongjae; Wallace, Robert M.
      The effect of room temperature ultraviolet-ozone (UV-O₃) exposure of MoS₂ on the uniformity of subsequent atomic layer deposition of Al₂O₃ is investigated. It is found that a UV-O₃ pre-treatment removes adsorbed carbon ...
    • Nucleation and Growth of WSe₂: Enabling Large Grain Transition Metal Dichalcogenides 

      Yue, Ruoyu; Nie, Yifan; Walsh, Lee A.; Addou, Rafik; Liang, Chaoping; Lu, Ning; Barton, Adam T.; Zhu, Hui; Che, Zifan; Barrera, Diego; Cheng, Lanxia; Cha, Pil-Ryung; Chabal, Yves J.; Hsu, Julia W. P.; Kim, Jiyoung; Kim, Moon J.; Colombo, Luigi; Wallace, Robert M.; Cho, Kyeongjae; Hinkle, Christopher L. (IOP Publishing Ltd, 2017-09-22)
      The limited grain size (< 200 nm) for transition metal dichalcogenides (TMDs) grown by molecular beam epitaxy (MBE) reported in the literature thus far is unsuitable for high-performance device applications. In this work, ...