Now showing items 1-2 of 2

    • Enhanced P-Type Behavior in 2D WSe2 via Chemical Defect Engineering 

      Rai, A.; Park, J. H.; Zhang, Chenxi; Kwak, I.; Wolf, S.; Vishwanath, S.; Lin, X.; Furdyna, J.; Xing, H. G.; Cho, Kyeongjae; Kummel, A. C.; Banerjee, S. K.
      Defect engineering of 2D semiconducting transition metal dichalcogenides (TMDCs) has been demonstrated to be a promising way to tune both their bandgaps and carrier concentrations. Moreover, controlled introduction of ...
    • WSe₂ Homojunctions and Quantum Dots Created by Patterned Hydrogenation of Epitaxial Graphene Substrates 

      Pan, Y.; Fölsch, S.; Lin, Y. -C; Jariwala, B.; Robinson, J. A.; Nie, Yifan; Cho, Kyeongjiae; Feenstra, R. M. (IOP Publishing Ltd, 2019-01-17)
      Scanning tunneling microscopy (STM) at 5 K is used to study WSe₂ layers grown on epitaxial graphene which is formed on Si-terminated SiC(0 0 0 1). Specifically, a partial hydrogenation process is applied to intercalate ...