Christopher Hinkle is an Assistant Professor in the Department of Materials Science and Engineering. His research involves photovoltaics, li-ion batteries and III-V nanoelectronics. Learn more about Dr. Hinkle on his Faculty Home and Research Explorer pages.

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Recent Submissions

  • Engineering The Palladium-WSe₂ Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts 

    Smyth, Christopher M.; Walsh, Lee A.; Bolshakov, Pavel; Catalano, Massimo; Addou, Rafik; Wang, Luhua; Kim, Jiyoung; Kim, Moon J.; Young, Chadwin D.; Hinkle, Christopher L.; Wallace, Robert M. (Amer Chemical Soc, 2018-12-07)
    Palladium has been widely employed as a hole contact to WSe₂ and has enabled, at times, the highest WSe₂ transistor performance. However, there are orders of magnitude variation across the literature in Pd-WSe₂ contact ...
  • Controlled Crack Propagation for Atomic Precision Handling of Wafer-Scale Two-Dimensional Materials 

    Shim, J.; Bae, S. -H; Kong, W.; Lee, D.; Qiao, K.; Nezich, D.; Park, Y. J.; Zhao, R.; Yue, Ruoyu; Zhou, Guanyu; Hinkle, Christopher L. (American Association for the Advancement of Science, 2018-10-11)
    Although flakes of two-dimensional (2D) heterostructures at the micrometer scale can be formed with adhesive-tape exfoliation methods, isolation of 2D flakes into monolayers is extremely time consuming because it is a ...
  • Nucleation and Growth of WSe₂: Enabling Large Grain Transition Metal Dichalcogenides 

    Yue, Ruoyu; Nie, Yifan; Walsh, Lee A.; Addou, Rafik; Liang, Chaoping; Lu, Ning; Barton, Adam T.; Zhu, Hui; Che, Zifan; Barrera, Diego; Cheng, Lanxia; Cha, Pil-Ryung; Chabal, Yves J.; Hsu, Julia W. P.; Kim, Jiyoung; Kim, Moon J.; Colombo, Luigi; Wallace, Robert M.; Cho, Kyeongjae; Hinkle, Christopher L. (IOP Publishing Ltd, 2017-09-22)
    The limited grain size (< 200 nm) for transition metal dichalcogenides (TMDs) grown by molecular beam epitaxy (MBE) reported in the literature thus far is unsuitable for high-performance device applications. In this work, ...
  • Chemical Bonding and Defect States of LPCVD Grown Silicon-Rich Si₃N₄ for Quantum Dot Applications 

    Mohammed, Shakil; Nimmo, Michael T.; Malko, Anton V.; Hinkle, Christopher L. (A V S: Science & Technology of Materials, Interfaces, and Processing, 2014-03)
    Si-rich Si₃N₄ (SRN) thin films were investigated to understand the various defect states present within the SRN that can lead to reduced performance in quantum dot based devices made of these materials. The SRN films, ...
  • In Situ Study of the Role of Substrate Temperature during Atomic Layer Deposition of HfO2 on InP 

    Dong, Hong; Santosh, KC; Qin, Xiaoye; Brennan, Barry; McDonnell, Steven; Zhernokletov, Dmitry; Hinkle, Christopher L.; Kim, Jiyoung; Cho, Kyeongjie; Wallace, Robert M. (2013-10-16)
    The dependence of the "self cleaning" effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO₂ on various chemically treated and native oxide InP (100) substrates is investigated ...