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dc.contributor.authorVandenberghe, William G.en_US
dc.contributor.authorVerhulst, Anne S.en_US
dc.contributor.authorSoree, Barten_US
dc.contributor.authorMagnus, Wimen_US
dc.contributor.authorGroeseneken, Guidoen_US
dc.contributor.authorSmets, Quentinen_US
dc.contributor.authorHeyns, Marcen_US
dc.contributor.authorFischetti, Massimo V.en_US
dc.date.accessioned2014-08-26T16:26:24Z
dc.date.available2014-08-26T16:26:24Z
dc.date.created2013-01-11
dc.identifier.citationVandenberghe, William G., Anne S. Verhulst, Bart Soree, Wim Magnus, et al. 2013. "Figure of merit for and identification of sub-60 mV/decade devices." Applied Physics Letters 102(013510): .en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/3927
dc.description.abstractA figure of merit I₆₀ is proposed for sub-60 mV/decade devices as the highest current where the input characteristics exhibit a transition from sub- to super-60 mV/decade behavior. For sub-60 mV/decade devices to be competitive with metal-oxide-semiconductor field-effect devices, I₆₀ has to be in the 1-10 μA/μm range. The best experimental tunnel field-effect transistors (TFETs) in the literature only have an I₆₀ of 6 x 10⁻³ μA/μm but using theoretical simulations, we show that an I₆₀ of up to 10 μA/μm should be attainable. It is proven that the Schottky barrier FET (SBFET) has a 60 mV/decade subthreshold swing limit while combining a SBFET and a TFET does improve performance.en_US
dc.relation.urihttp://dx.doi.org/10.1063/1.4773521en_US
dc.rights©2013 American Institute of Physicsen_US
dc.subjectLithium air batteriesen_US
dc.subjectMetal oxide semiconductor field-effect transistorsen_US
dc.subjectTunnelingen_US
dc.subjectField-effect transistorsen_US
dc.subjectFerroelectric devicesen_US
dc.titleFigure of Merit for and Identification of Sub-60 mV/Decade Devicesen_US
dc.type.genrearticleen_US
dc.source.journalApplied Physics Lettersen_US
dc.identifier.volume102en_US
dc.identifier.issue13510en_US


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