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Silicon Etch Using SF₆/C₄F₈/Ar Gas Mixtures
While plasmas using mixtures of SF₆, C₄F₈, and Ar are widely used in deep silicon etching, very few studies have linked the discharge parameters to etching results. The authors form such linkages in this report. The authors ...
Comparison endpoint study of process plasma and secondary electron beam exciter optical emission spectroscopy
(American Vacuum Society, 2012-10-03)
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Electron Beam Excitation Method to Study Gas Phase During Etch Processes
In process optical emission spectroscopy (OES) measurements, excitation mechanisms as dictated by the process plasma can be complex to analyze optical signals quantitatively. Applications of a new electron beam excitation ...