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dc.contributor.authorPimenov, A.en_US
dc.contributor.authorViktorov, E. A.en_US
dc.contributor.authorHegarty, S. P.en_US
dc.contributor.authorHabruseva, T.en_US
dc.contributor.authorHuyet, G.en_US
dc.contributor.authorRachinskii, Dmitry I.en_US
dc.contributor.authorVladimirov, A. G.en_US
dc.date.accessioned2014-11-12T21:26:04Z
dc.date.available2014-11-12T21:26:04Z
dc.date.created2014-05-08en_US
dc.date.issued2014-05-08en_US
dc.identifier.issn1539-3755en_US
dc.identifier.urihttp://hdl.handle.net/10735.1/4170
dc.description.abstractThe effect of coherent single frequency injection on two-section semiconductor lasers is studied numerically using a model based on a set of delay differential equations. The existence of bistability between different continuous-wave and nonstationary regimes of operation is demonstrated in the case of sufficiently large linewidth enhancement factors.en_US
dc.description.sponsorshipSFB 787 of the DFG, Project No. B5; Marie Curie Action FP7-PEOPLE-2011-IEF; HARMOFIRE project, Grant No. 299288; EU FP7 Marie Curie Action FP7-PEOPLE-2010-ITN through the PROPHET project, Grant No. 264687; E. T. S. Walton Visitors Award of the SFI. G.H. and S.P.H.; Science Foundation Ireland (SFI) under Contract No. 11/PI/1152, and under the framework of the INSPIRE Structured Ph.D. Programme, funded by the Irish Government's Programme for Research in Third Level Institutions, Cycle 5, National Development Plan 2007–2013.en_US
dc.language.isoenen_US
dc.publisherAmer Physical Socen_US
dc.relation.urihttp://dx.doi.org/10.1103/PhysRevE.89.052903
dc.rights©2014 American Physical Societyen_US
dc.sourcePhysical Review E
dc.subjectOptical bistabilityen_US
dc.subjectHysteresisen_US
dc.subjectLasersen_US
dc.subjectLinewidth enhancement factors.en_US
dc.titleBistability and Hysteresis in an Optically Injected Two-Section Semiconductor Laseren_US
dc.type.genreArticleen_US
dc.identifier.bibliographicCitationPimenov, A., E. A. Viktorov, S. P. Hegarty, T. Habruseva, et al. 2014. "Bistability and hysteresis in an optically injected two-section semiconductor laser." Physical Review E 89(5): 052903-1 to 7.en_US
dc.identifier.volume89en_US
dc.identifier.issue5en_US
dc.identifier.startpage52903en_US
dc.contributor.utdAuthorRachinskii, Dmitry I.en_US
dc.contributor.ISNI0000 0003 5341 0057 (Rachinskii, DI)


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