Young, Chadwin D.
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Chadwin Young is an Assistant Professor of Materials Science and Engineering. His research interests include:
- Electrical Characterization Methodologies
- Reliability Characterization Methodologies
- Solid State Device Physics
- Electrical properties of materials
- MOS modeling (quantum effects, etc.)
- Nanotechnology
- Flexible Electronics
- Future Energy Needs (Renewable, low power operation, etc.)
ORCID page
Works in Treasures @ UT Dallas are made available exclusively for educational purposes such as research or instruction. Literary rights, including copyright for published works held by the creator(s) or their heirs, or other third parties may apply. All rights are reserved unless otherwise indicated by the copyright owner(s).
Recent Submissions
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Engineering The Palladium-WSe₂ Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts
(Amer Chemical Soc, 2018-12-07)Palladium has been widely employed as a hole contact to WSe₂ and has enabled, at times, the highest WSe₂ transistor performance. However, there are orders of magnitude variation across the literature in Pd-WSe₂ contact ... -
A Multifield and Frequency Electrically Detected Magnetic Resonance Study of Atomic-Scale Defects in Gamma Irradiated Modern MOS Integrated Circuitry
(IEEE-Institute of Electrical and Electronics Engineers Inc, 2018-11-09)The role of specific atomic-scale defects involved in total ionizing dose radiation in the metal-oxide-semiconductor field-effect transistors of the 1980s and 1990s was identified in large part with electron paramagnetic ... -
A New Analytical Tool for the Study of Radiation Effects in 3-D Integrated Circuits: Near-Zero Field Magnetoresistance Spectroscopy
(Institute of Electrical Electronics Engineers Inc, 2018-12-06)We demonstrate that a new technique, near-zero field magnetoresistance (NZFMR) spectroscopy, can explore radiation damage in a wide variety of devices in a proof-of-concept study. The technique has great potential for the ... -
Positive Bias Instability in ZnO TFTs with Al₂O₃ Gate Dielectric
(Institute of Electrical and Electronics Engineers Inc., 2019-03-31)Positive bias instability stress (PBI) was done on ZnO thin-film transistors (TFTs) with Al₂O₃ deposition at 100°C and 250°C. The threshold voltage (VT), transconductance (g ₘ), and subthreshold slope (SS) were monitored ... -
Sensitivity of High-k Encapsulated MoS₂ Transistors to I-V Measurement Execution Time
High-k encapsulated MoS₂ field-effect-transistors were fabricated and electrically characterized. Comparison between HfO₂ and Al₂O₃ encapsulated MoS₂ FETs and their I-V response to execution time are shown. Changes in gate ... -
Ferroelectric TiN/Hf₀.₅Zr₀.₅O₂/Tin Capacitors with Low-Voltage Operation and High Reliability for Next-Generation FRAM Applications
In this study, we investigated the ferroelectric properties of Hf₀.₅Zr₀.₅O₂ (HZO) thin films with different thicknesses (5-20 nm) deposited by atomic layer deposition for the development of future ferroelectric random ... -
Electrical Characterization of the Temperature Dependence in CdTe/CdS Heterojunctions Deposited In-Situ by Pulsed Laser Deposition
The I-V and C-V characteristics of CdTe/CdS heterojunctions deposited in-situ by Pulsed Laser Deposition (PLD) were evaluated. In-situ deposition enables the study of the CdTe/CdS interface by avoiding potential impurities ... -
Dual-Gate MoS₂ Transistors with Sub-10 NM Top-Gate High-K Dielectrics
High quality sub-10 nm high-k dielectrics are deposited on top of MoS₂ and evaluated using a dual-gate field effect transistor configuration. Comparison between top-gate HfO₂ and an Al₂O₃/HfO₂ bilayer shows significant ... -
Effect of Film Thickness on the Ferroelectric and Dielectric Properties of Low-Temperature (400 ⁰C) Hf₀.₅Zr₀.₅O₂ Films
We report on the effect of the Hf₀.₅Zr₀.₅O₂ (HZO) film thickness on the ferroelectric and dielectric properties using pulse write/read measurements. HZO films of thicknesses ranging from 5 to 20 nm were annealed at 400 ... -
Investigation of Negative Bias Temperature Instability Dependence on Fin Width of Silicon-On-Insulator-Fin-Based Field Effect Transistors
The fin width dependence of negative bias temperature instability (NBTI) of double-gate, fin-based p-type Field Effect Transistors (FinFETs) fabricated on silicon-on-insulator (SOI) wafers was investigated. The NBTI ...
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