Young, Chadwin D.
Chadwin Young is an Assistant Professor of Materials Science and Engineering. His research interests include:
- Electrical Characterization Methodologies
- Reliability Characterization Methodologies
- Solid State Device Physics
- Electrical properties of materials
- MOS modeling (quantum effects, etc.)
- Flexible Electronics
- Future Energy Needs (Renewable, low power operation, etc.)
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(Institute of Electrical and Electronics Engineers Inc., 2019-03-31)Positive bias instability stress (PBI) was done on ZnO thin-film transistors (TFTs) with Al₂O₃ deposition at 100°C and 250°C. The threshold voltage (VT), transconductance (g ₘ), and subthreshold slope (SS) were monitored ...
High-k encapsulated MoS₂ field-effect-transistors were fabricated and electrically characterized. Comparison between HfO₂ and Al₂O₃ encapsulated MoS₂ FETs and their I-V response to execution time are shown. Changes in gate ...
Ferroelectric TiN/Hf₀.₅Zr₀.₅O₂/Tin Capacitors with Low-Voltage Operation and High Reliability for Next-Generation FRAM Applications In this study, we investigated the ferroelectric properties of Hf₀.₅Zr₀.₅O₂ (HZO) thin films with different thicknesses (5-20 nm) deposited by atomic layer deposition for the development of future ferroelectric random ...
High quality sub-10 nm high-k dielectrics are deposited on top of MoS₂ and evaluated using a dual-gate field effect transistor configuration. Comparison between top-gate HfO₂ and an Al₂O₃/HfO₂ bilayer shows significant ...
Electrical Characterization of the Temperature Dependence in CdTe/CdS Heterojunctions Deposited In-Situ by Pulsed Laser Deposition The I-V and C-V characteristics of CdTe/CdS heterojunctions deposited in-situ by Pulsed Laser Deposition (PLD) were evaluated. In-situ deposition enables the study of the CdTe/CdS interface by avoiding potential impurities ...
Effect of Film Thickness on the Ferroelectric and Dielectric Properties of Low-Temperature (400 ⁰C) Hf₀.₅Zr₀.₅O₂ Films We report on the effect of the Hf₀.₅Zr₀.₅O₂ (HZO) film thickness on the ferroelectric and dielectric properties using pulse write/read measurements. HZO films of thicknesses ranging from 5 to 20 nm were annealed at 400 ...
Investigation of Negative Bias Temperature Instability Dependence on Fin Width of Silicon-On-Insulator-Fin-Based Field Effect Transistors The fin width dependence of negative bias temperature instability (NBTI) of double-gate, fin-based p-type Field Effect Transistors (FinFETs) fabricated on silicon-on-insulator (SOI) wafers was investigated. The NBTI ...