Browsing Young, Chadwin D. by Title
Now showing items 7-9 of 9
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Investigation of Negative Bias Temperature Instability Dependence on Fin Width of Silicon-On-Insulator-Fin-Based Field Effect Transistors
The fin width dependence of negative bias temperature instability (NBTI) of double-gate, fin-based p-type Field Effect Transistors (FinFETs) fabricated on silicon-on-insulator (SOI) wafers was investigated. The NBTI ... -
Positive Bias Instability in ZnO TFTs with Al₂O₃ Gate Dielectric
(Institute of Electrical and Electronics Engineers Inc., 2019-03-31)Positive bias instability stress (PBI) was done on ZnO thin-film transistors (TFTs) with Al₂O₃ deposition at 100°C and 250°C. The threshold voltage (VT), transconductance (g ₘ), and subthreshold slope (SS) were monitored ... -
Sensitivity of High-k Encapsulated MoS₂ Transistors to I-V Measurement Execution Time
High-k encapsulated MoS₂ field-effect-transistors were fabricated and electrically characterized. Comparison between HfO₂ and Al₂O₃ encapsulated MoS₂ FETs and their I-V response to execution time are shown. Changes in gate ...