Now showing items 8-9 of 9

    • Positive Bias Instability in ZnO TFTs with Al₂O₃ Gate Dielectric 

      Bolshakov, Pavel; Rodriguez-Davila, Rodolfo A.; Quevedo-López, Manuel A.; Young, Chadwin D. (Institute of Electrical and Electronics Engineers Inc., 2019-03-31)
      Positive bias instability stress (PBI) was done on ZnO thin-film transistors (TFTs) with Al₂O₃ deposition at 100°C and 250°C. The threshold voltage (VT), transconductance (g ₘ), and subthreshold slope (SS) were monitored ...
    • Sensitivity of High-k Encapsulated MoS₂ Transistors to I-V Measurement Execution Time 

      Bolshakov, Pavel; Khosravi, Ava; Zhao, Peng; Wallace, Robert M.; Young, Chadwin D.; Hurley, P. K.
      High-k encapsulated MoS₂ field-effect-transistors were fabricated and electrically characterized. Comparison between HfO₂ and Al₂O₃ encapsulated MoS₂ FETs and their I-V response to execution time are shown. Changes in gate ...