Browsing Young, Chadwin D. by Author "Bolshakov, Pavel"

Now showing items 1-4 of 4

    • Dual-Gate MoS₂ Transistors with Sub-10 NM Top-Gate High-K Dielectrics 

      Bolshakov, Pavel; Khosravi, Ava; Zhao, Peng; Hurley, P. K.; Hinkle, Christopher L.; Wallace, Robert M.; Young, Chadwin D.
      High quality sub-10 nm high-k dielectrics are deposited on top of MoS₂ and evaluated using a dual-gate field effect transistor configuration. Comparison between top-gate HfO₂ and an Al₂O₃/HfO₂ bilayer shows significant ...

    • Engineering The Palladium-WSe₂ Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts 

      Smyth, Christopher M.; Walsh, Lee A.; Bolshakov, Pavel; Catalano, Massimo; Addou, Rafik; Wang, Luhua; Kim, Jiyoung; Kim, Moon J.; Young, Chadwin D.; Hinkle, Christopher L.; Wallace, Robert M. (Amer Chemical Soc, 2018-12-07)
      Palladium has been widely employed as a hole contact to WSe₂ and has enabled, at times, the highest WSe₂ transistor performance. However, there are orders of magnitude variation across the literature in Pd-WSe₂ contact ...

    • Positive Bias Instability in ZnO TFTs with Al₂O₃ Gate Dielectric 

      Bolshakov, Pavel; Rodriguez-Davila, Rodolfo A.; Quevedo-López, Manuel A.; Young, Chadwin D. (Institute of Electrical and Electronics Engineers Inc., 2019-03-31)
      Positive bias instability stress (PBI) was done on ZnO thin-film transistors (TFTs) with Al₂O₃ deposition at 100°C and 250°C. The threshold voltage (VT), transconductance (g ₘ), and subthreshold slope (SS) were monitored ...

    • Sensitivity of High-k Encapsulated MoS₂ Transistors to I-V Measurement Execution Time 

      Bolshakov, Pavel; Khosravi, Ava; Zhao, Peng; Wallace, Robert M.; Young, Chadwin D.; Hurley, P. K.
      High-k encapsulated MoS₂ field-effect-transistors were fabricated and electrically characterized. Comparison between HfO₂ and Al₂O₃ encapsulated MoS₂ FETs and their I-V response to execution time are shown. Changes in gate ...