Now showing items 1-2 of 2

    • Dual-Gate MoS₂ Transistors with Sub-10 NM Top-Gate High-K Dielectrics 

      Bolshakov, Pavel; Khosravi, Ava; Zhao, Peng; Hurley, P. K.; Hinkle, Christopher L.; Wallace, Robert M.; Young, Chadwin D.
      High quality sub-10 nm high-k dielectrics are deposited on top of MoS₂ and evaluated using a dual-gate field effect transistor configuration. Comparison between top-gate HfO₂ and an Al₂O₃/HfO₂ bilayer shows significant ...
    • Sensitivity of High-k Encapsulated MoS₂ Transistors to I-V Measurement Execution Time 

      Bolshakov, Pavel; Khosravi, Ava; Zhao, Peng; Wallace, Robert M.; Young, Chadwin D.; Hurley, P. K.
      High-k encapsulated MoS₂ field-effect-transistors were fabricated and electrically characterized. Comparison between HfO₂ and Al₂O₃ encapsulated MoS₂ FETs and their I-V response to execution time are shown. Changes in gate ...