Now showing items 1-5 of 5
Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenides
The exponential growth of Si-based technology has finally reached its limit, and a new generation of devices must be developed to continue scaling. A unique class of materials, transition metal dichalcogenides (TMD), have ...
Investigation of Electrical Properties of Transition Metal Dichalcogenides Transistors with High-K Dielectrics
Recently, transition metal dichalcogenides (TMDs) have attracted intense attention due to their atomic layer-by-layer structure and unique electronic, optical and mechanical properties. Some of them, such as MoS₂ and WSe₂, ...
Multiscale Simulation Method Development and Application in Two-Dimensional Functional Materials
The unique properties of two-dimensional (2D) materials make them the potential solutions to a wide variety of engineering challenges, especially in electronic device engineering. In order to realize their application ...
First-Principle Study on Electronic Structures of Two-Dimensional Transition Metal Dichalcogenides
Two-dimensional (2D) transition metal dichalcogenides (TMDs), because of their sizable direct band gap, ultrathin body, good electron mobility, and versatile electronic structures, have attracted a lot of attention. They ...
Surface Engineering of Transition Metal Dichalcogenides for Two-Dimensional Electronic Device Applications
Two-dimensional transition metal dichalcogenides (TMDs) are considered potential channel materials for emerging electronic devices in the roadmap beyond Si-CMOS technology. Layered TMDs offer intrinsically an ultrathin ...