Shi, Xiaoyan

Permanent URI for this collectionhttps://hdl.handle.net/10735.1/4925

Xiaoyan Shi is an Assistant Professor of Physics and the Principal Investigator of the Quantum Transport Group. His research interests include:

  • Experimental condensed matter physics
  • Novel quantum materials
  • Low-temperature physics
  • Superconductors
  • Topological matters
  • Semiconductor heterostructures

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    Anomalously Large Resistance at the Charge Neutrality Point in a Zero-Gap InAs/GaSb Bilayer
    (IOP Publishing Ltd) Yu, W.; Clerico, V.; Hernandez Fuentevilla, C.; Shi, Xiaoyan; Jiang, Y.; Saha, D.; Lou, W. K.; Chang, K.; Huang, D. H.; Gumbs, G.; Smirnov, D.; Stanton, C. J.; Jiang, Z.; Bellani, V.; Meziani, Y.; Diez, E.; Pan, W.; Hawkins, S. D.; Klem, J. F.; Shi, Xiaoyan
    We report here our recent electron transport results in spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (similar to 500 k Omega) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature dependence above T = 7 Kand perfect stability against quantizing magnetic fields. We discuss several mechanisms for that unexpectedly large resistance in this zero-gap semi-metal system including the formation of an excitonic insulator state.
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    Far Infrared Edge Photoresponse and Persistent Edge Transport in an Inverted InAs/GaSb Heterostructure
    (American Institute of Physics Inc, 2016-01-07) Dyer, G. C.; Shi, Xiaoyan; Olson, B. V.; Hawkins, S. D.; Klem, J. F.; Shaner, E. A.; Pan, W.; Shi, Xiaoyan
    Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at oblique incidence, we measured a strong photovoltaic response. We conclude that quantum spin Hall edge transport produces the observed transverse photovoltages. Overall, our experimental results support a hypothesis that the photoresponse arises from direct coupling of the incident radiation field to edge states.

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