Now showing items 1-2 of 2

    • Anomalously Large Resistance at the Charge Neutrality Point in a Zero-Gap InAs/GaSb Bilayer 

      Yu, W.; Clerico, V.; Hernandez Fuentevilla, C.; Shi, Xiaoyan; Jiang, Y.; Saha, D.; Lou, W. K.; Chang, K.; Huang, D. H.; Gumbs, G.; Smirnov, D.; Stanton, C. J.; Jiang, Z.; Bellani, V.; Meziani, Y.; Diez, E.; Pan, W.; Hawkins, S. D.; Klem, J. F.
      We report here our recent electron transport results in spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We ...
    • Far Infrared Edge Photoresponse and Persistent Edge Transport in an Inverted InAs/GaSb Heterostructure 

      Dyer, G. C.; Shi, Xiaoyan; Olson, B. V.; Hawkins, S. D.; Klem, J. F.; Shaner, E. A.; Pan, W. (American Institute of Physics Inc, 2016-01-07)
      Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating ...